Study on the Carrier Transport Process in Deep Ultraviolet Light-Emitting Diodes with Al-Content-Varied AlGaN Composite Last Quantum Barrier
Serious electron leakage and poor hole injection efficiency are still challenges for deep ultraviolet AlGaN-based light-emitting diodes with a traditional structure in achieving high performance. Currently, the majority of research works concentrate on optimizing the structures of the electron block...
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MDPI AG
2024-12-01
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| Online Access: | https://www.mdpi.com/2072-666X/15/12/1502 |
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| author | Wei Liu Yujia Liu Junhua Gao Zeyu Liu Bohan Shi Linyuan Zhang Xinnan Zhao Runzhi Wang |
| author_facet | Wei Liu Yujia Liu Junhua Gao Zeyu Liu Bohan Shi Linyuan Zhang Xinnan Zhao Runzhi Wang |
| author_sort | Wei Liu |
| collection | DOAJ |
| description | Serious electron leakage and poor hole injection efficiency are still challenges for deep ultraviolet AlGaN-based light-emitting diodes with a traditional structure in achieving high performance. Currently, the majority of research works concentrate on optimizing the structures of the electron blocking layer (EBL) and last quantum barrier (LQB) separately, rather than considering them as an integrated structure. Therefore, in this study, an Al-content-varied AlGaN composite last quantum barrier (CLQB) layer is proposed to replace the traditional EBL and LQB layers. It is found that when the Al content in the CLQB decreases from 70% to 60% along the growth direction, the sample’s luminescence efficiency is improved, which can be ascribed to the higher carrier concentration in the multiple quantum well active region caused by suppressed electron leakage and enhanced hole injection. Additionally, in the CLQB structure, the carrier loss at the EBL/LQB hetero-interface, which is inevitable in the traditional structure, can be avoided. However, if the Al content in the CLQB changes in an opposite way, i.e., increasing from 60% to 70%, the device optoelectronic performance deteriorates, since the electron leakage is enhanced and the hole injection is suppressed. |
| format | Article |
| id | doaj-art-f6ae37da70c543b68a6896086d48288b |
| institution | Kabale University |
| issn | 2072-666X |
| language | English |
| publishDate | 2024-12-01 |
| publisher | MDPI AG |
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| series | Micromachines |
| spelling | doaj-art-f6ae37da70c543b68a6896086d48288b2024-12-27T14:40:52ZengMDPI AGMicromachines2072-666X2024-12-011512150210.3390/mi15121502Study on the Carrier Transport Process in Deep Ultraviolet Light-Emitting Diodes with Al-Content-Varied AlGaN Composite Last Quantum BarrierWei Liu0Yujia Liu1Junhua Gao2Zeyu Liu3Bohan Shi4Linyuan Zhang5Xinnan Zhao6Runzhi Wang7School of Microelectronics, Northwestern Polytechnical University, Xi’an 710129, ChinaSchool of Microelectronics, Northwestern Polytechnical University, Xi’an 710129, ChinaChongqing Engineering Research Center of New Energy Storage Devices and Applications, Chongqing University of Arts and Sciences, Chongqing 402160, ChinaSchool of Microelectronics, Northwestern Polytechnical University, Xi’an 710129, ChinaSchool of Microelectronics, Northwestern Polytechnical University, Xi’an 710129, ChinaSchool of Microelectronics, Northwestern Polytechnical University, Xi’an 710129, ChinaSchool of Microelectronics, Northwestern Polytechnical University, Xi’an 710129, ChinaSchool of Microelectronics, Northwestern Polytechnical University, Xi’an 710129, ChinaSerious electron leakage and poor hole injection efficiency are still challenges for deep ultraviolet AlGaN-based light-emitting diodes with a traditional structure in achieving high performance. Currently, the majority of research works concentrate on optimizing the structures of the electron blocking layer (EBL) and last quantum barrier (LQB) separately, rather than considering them as an integrated structure. Therefore, in this study, an Al-content-varied AlGaN composite last quantum barrier (CLQB) layer is proposed to replace the traditional EBL and LQB layers. It is found that when the Al content in the CLQB decreases from 70% to 60% along the growth direction, the sample’s luminescence efficiency is improved, which can be ascribed to the higher carrier concentration in the multiple quantum well active region caused by suppressed electron leakage and enhanced hole injection. Additionally, in the CLQB structure, the carrier loss at the EBL/LQB hetero-interface, which is inevitable in the traditional structure, can be avoided. However, if the Al content in the CLQB changes in an opposite way, i.e., increasing from 60% to 70%, the device optoelectronic performance deteriorates, since the electron leakage is enhanced and the hole injection is suppressed.https://www.mdpi.com/2072-666X/15/12/1502ultraviolet light-emitting diodesAlGaN quantum wellselectron blocking layerquantum barrierscarrier transport |
| spellingShingle | Wei Liu Yujia Liu Junhua Gao Zeyu Liu Bohan Shi Linyuan Zhang Xinnan Zhao Runzhi Wang Study on the Carrier Transport Process in Deep Ultraviolet Light-Emitting Diodes with Al-Content-Varied AlGaN Composite Last Quantum Barrier Micromachines ultraviolet light-emitting diodes AlGaN quantum wells electron blocking layer quantum barriers carrier transport |
| title | Study on the Carrier Transport Process in Deep Ultraviolet Light-Emitting Diodes with Al-Content-Varied AlGaN Composite Last Quantum Barrier |
| title_full | Study on the Carrier Transport Process in Deep Ultraviolet Light-Emitting Diodes with Al-Content-Varied AlGaN Composite Last Quantum Barrier |
| title_fullStr | Study on the Carrier Transport Process in Deep Ultraviolet Light-Emitting Diodes with Al-Content-Varied AlGaN Composite Last Quantum Barrier |
| title_full_unstemmed | Study on the Carrier Transport Process in Deep Ultraviolet Light-Emitting Diodes with Al-Content-Varied AlGaN Composite Last Quantum Barrier |
| title_short | Study on the Carrier Transport Process in Deep Ultraviolet Light-Emitting Diodes with Al-Content-Varied AlGaN Composite Last Quantum Barrier |
| title_sort | study on the carrier transport process in deep ultraviolet light emitting diodes with al content varied algan composite last quantum barrier |
| topic | ultraviolet light-emitting diodes AlGaN quantum wells electron blocking layer quantum barriers carrier transport |
| url | https://www.mdpi.com/2072-666X/15/12/1502 |
| work_keys_str_mv | AT weiliu studyonthecarriertransportprocessindeepultravioletlightemittingdiodeswithalcontentvariedalgancompositelastquantumbarrier AT yujialiu studyonthecarriertransportprocessindeepultravioletlightemittingdiodeswithalcontentvariedalgancompositelastquantumbarrier AT junhuagao studyonthecarriertransportprocessindeepultravioletlightemittingdiodeswithalcontentvariedalgancompositelastquantumbarrier AT zeyuliu studyonthecarriertransportprocessindeepultravioletlightemittingdiodeswithalcontentvariedalgancompositelastquantumbarrier AT bohanshi studyonthecarriertransportprocessindeepultravioletlightemittingdiodeswithalcontentvariedalgancompositelastquantumbarrier AT linyuanzhang studyonthecarriertransportprocessindeepultravioletlightemittingdiodeswithalcontentvariedalgancompositelastquantumbarrier AT xinnanzhao studyonthecarriertransportprocessindeepultravioletlightemittingdiodeswithalcontentvariedalgancompositelastquantumbarrier AT runzhiwang studyonthecarriertransportprocessindeepultravioletlightemittingdiodeswithalcontentvariedalgancompositelastquantumbarrier |