Study on the Carrier Transport Process in Deep Ultraviolet Light-Emitting Diodes with Al-Content-Varied AlGaN Composite Last Quantum Barrier

Study on the Carrier Transport Process in Deep Ultraviolet Light-Emitting Diodes with Al-Content-Varied AlGaN Composite Last Quantum Barrier

Serious electron leakage and poor hole injection efficiency are still challenges for deep ultraviolet AlGaN-based light-emitting diodes with a traditional structure in achieving high performance. Currently, the majority of research works concentrate on optimizing the structures of the electron block...

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Bibliographic Details
Main Authors: Wei Liu, Yujia Liu, Junhua Gao, Zeyu Liu, Bohan Shi, Linyuan Zhang, Xinnan Zhao, Runzhi Wang
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Micromachines
Subjects:
ultraviolet light-emitting diodes
AlGaN quantum wells
electron blocking layer
quantum barriers
carrier transport
Online Access:https://www.mdpi.com/2072-666X/15/12/1502
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