Ultrathin WOx interfacial layer improving the ferroelectricity and endurance of Hf0.5Zr0.5O2 thin films on polyimide
Here we report substantial effects of inserting PVD-prepared highly-conductive ultrathin WOx as interfacial layer in TiN/Hf0.5Zr0.5O2(HZO)/TiN structure on the ferroelectricity of HZO thin films. The prepared TiN/WOx/HZO/WOx/TiN capacitor, exhibiting a remnant polarization (Pr) of 18.8 μC/cm2 at 2 M...
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Elsevier
2025-07-01
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| Series: | Journal of Materiomics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352847824001813 |
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| author | Chunxu Zhao Huiping Wang Xinyu Gu Wei Zhang Yubao Li |
| author_facet | Chunxu Zhao Huiping Wang Xinyu Gu Wei Zhang Yubao Li |
| author_sort | Chunxu Zhao |
| collection | DOAJ |
| description | Here we report substantial effects of inserting PVD-prepared highly-conductive ultrathin WOx as interfacial layer in TiN/Hf0.5Zr0.5O2(HZO)/TiN structure on the ferroelectricity of HZO thin films. The prepared TiN/WOx/HZO/WOx/TiN capacitor, exhibiting a remnant polarization (Pr) of 18.8 μC/cm2 at 2 MV/cm and outstanding endurance of over 3.2 × 109 cycles under 105 Hz bipolar square field cycling. Furthermore, a scalable transfer technique, in which CVD-grown few-layered graphene thin film is used as a sacrificial layer, is developed for transferring HZO-based ferroelectric stack pre-fabricated on SiO2/Si substrate onto a flexible polyimide (PI) membrane, with marginal loss in the ferroelectric properties of HZO. Importantly, mechanical bending testing demonstrates excellent flexibility of TiN/WOx/HZO/WOx/TiN stack, with robust polarization and superb endurance properties being well-maintained even after 104 cycles at a small bending radius of 2 mm. Both implementing ultrathin WOx as interfacial layers and utilizing two-dimensional materials assisted transfer technique would be of great value in the development of HfO2-based flexible ferroelectric memory. |
| format | Article |
| id | doaj-art-f3f10a9dc2b44dbd9c7aa14e46fc3b3c |
| institution | Kabale University |
| issn | 2352-8478 |
| language | English |
| publishDate | 2025-07-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materiomics |
| spelling | doaj-art-f3f10a9dc2b44dbd9c7aa14e46fc3b3c2025-08-20T03:44:28ZengElsevierJournal of Materiomics2352-84782025-07-0111410094210.1016/j.jmat.2024.100942Ultrathin WOx interfacial layer improving the ferroelectricity and endurance of Hf0.5Zr0.5O2 thin films on polyimideChunxu Zhao0Huiping Wang1Xinyu Gu2Wei Zhang3Yubao Li4Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, Hebei, ChinaHebei Key Lab of Optic-electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, Hebei, ChinaHebei Key Lab of Optic-electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, Hebei, ChinaCorresponding author.; Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, Hebei, ChinaCorresponding author.; Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, Hebei, ChinaHere we report substantial effects of inserting PVD-prepared highly-conductive ultrathin WOx as interfacial layer in TiN/Hf0.5Zr0.5O2(HZO)/TiN structure on the ferroelectricity of HZO thin films. The prepared TiN/WOx/HZO/WOx/TiN capacitor, exhibiting a remnant polarization (Pr) of 18.8 μC/cm2 at 2 MV/cm and outstanding endurance of over 3.2 × 109 cycles under 105 Hz bipolar square field cycling. Furthermore, a scalable transfer technique, in which CVD-grown few-layered graphene thin film is used as a sacrificial layer, is developed for transferring HZO-based ferroelectric stack pre-fabricated on SiO2/Si substrate onto a flexible polyimide (PI) membrane, with marginal loss in the ferroelectric properties of HZO. Importantly, mechanical bending testing demonstrates excellent flexibility of TiN/WOx/HZO/WOx/TiN stack, with robust polarization and superb endurance properties being well-maintained even after 104 cycles at a small bending radius of 2 mm. Both implementing ultrathin WOx as interfacial layers and utilizing two-dimensional materials assisted transfer technique would be of great value in the development of HfO2-based flexible ferroelectric memory.http://www.sciencedirect.com/science/article/pii/S2352847824001813WOx interfacial layerHf0.5Zr0.5O2 ferroelectricsEndurancePolyimideFlexible electronics |
| spellingShingle | Chunxu Zhao Huiping Wang Xinyu Gu Wei Zhang Yubao Li Ultrathin WOx interfacial layer improving the ferroelectricity and endurance of Hf0.5Zr0.5O2 thin films on polyimide Journal of Materiomics WOx interfacial layer Hf0.5Zr0.5O2 ferroelectrics Endurance Polyimide Flexible electronics |
| title | Ultrathin WOx interfacial layer improving the ferroelectricity and endurance of Hf0.5Zr0.5O2 thin films on polyimide |
| title_full | Ultrathin WOx interfacial layer improving the ferroelectricity and endurance of Hf0.5Zr0.5O2 thin films on polyimide |
| title_fullStr | Ultrathin WOx interfacial layer improving the ferroelectricity and endurance of Hf0.5Zr0.5O2 thin films on polyimide |
| title_full_unstemmed | Ultrathin WOx interfacial layer improving the ferroelectricity and endurance of Hf0.5Zr0.5O2 thin films on polyimide |
| title_short | Ultrathin WOx interfacial layer improving the ferroelectricity and endurance of Hf0.5Zr0.5O2 thin films on polyimide |
| title_sort | ultrathin wox interfacial layer improving the ferroelectricity and endurance of hf0 5zr0 5o2 thin films on polyimide |
| topic | WOx interfacial layer Hf0.5Zr0.5O2 ferroelectrics Endurance Polyimide Flexible electronics |
| url | http://www.sciencedirect.com/science/article/pii/S2352847824001813 |
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