Ultrathin WOx interfacial layer improving the ferroelectricity and endurance of Hf0.5Zr0.5O2 thin films on polyimide

Here we report substantial effects of inserting PVD-prepared highly-conductive ultrathin WOx as interfacial layer in TiN/Hf0.5Zr0.5O2(HZO)/TiN structure on the ferroelectricity of HZO thin films. The prepared TiN/WOx/HZO/WOx/TiN capacitor, exhibiting a remnant polarization (Pr) of 18.8 μC/cm2 at 2 M...

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Bibliographic Details
Main Authors: Chunxu Zhao, Huiping Wang, Xinyu Gu, Wei Zhang, Yubao Li
Format: Article
Language:English
Published: Elsevier 2025-07-01
Series:Journal of Materiomics
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2352847824001813
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