Ultrathin WOx interfacial layer improving the ferroelectricity and endurance of Hf0.5Zr0.5O2 thin films on polyimide
Here we report substantial effects of inserting PVD-prepared highly-conductive ultrathin WOx as interfacial layer in TiN/Hf0.5Zr0.5O2(HZO)/TiN structure on the ferroelectricity of HZO thin films. The prepared TiN/WOx/HZO/WOx/TiN capacitor, exhibiting a remnant polarization (Pr) of 18.8 μC/cm2 at 2 M...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-07-01
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| Series: | Journal of Materiomics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352847824001813 |
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| Summary: | Here we report substantial effects of inserting PVD-prepared highly-conductive ultrathin WOx as interfacial layer in TiN/Hf0.5Zr0.5O2(HZO)/TiN structure on the ferroelectricity of HZO thin films. The prepared TiN/WOx/HZO/WOx/TiN capacitor, exhibiting a remnant polarization (Pr) of 18.8 μC/cm2 at 2 MV/cm and outstanding endurance of over 3.2 × 109 cycles under 105 Hz bipolar square field cycling. Furthermore, a scalable transfer technique, in which CVD-grown few-layered graphene thin film is used as a sacrificial layer, is developed for transferring HZO-based ferroelectric stack pre-fabricated on SiO2/Si substrate onto a flexible polyimide (PI) membrane, with marginal loss in the ferroelectric properties of HZO. Importantly, mechanical bending testing demonstrates excellent flexibility of TiN/WOx/HZO/WOx/TiN stack, with robust polarization and superb endurance properties being well-maintained even after 104 cycles at a small bending radius of 2 mm. Both implementing ultrathin WOx as interfacial layers and utilizing two-dimensional materials assisted transfer technique would be of great value in the development of HfO2-based flexible ferroelectric memory. |
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| ISSN: | 2352-8478 |