Influence and reinforcement of gate bias on total dose effect of SiC MOSFET

Influence and reinforcement of gate bias on total dose effect of SiC MOSFET

To address the MOSFETs threshold drift caused by the total dose effect, 1 200 V SiC MOSFETs were used for irradiation experiments. The effect and mechanism of gate bias voltage and high-temperature gate bias annealing after irradiation on the threshold drift of MOSFETs were investigated. Through the...

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Bibliographic Details
Main Authors: QIU Leshan, WU Zhikang, CHEN Yan, LI Chengzhan, BAI Yun
Format: Article
Language:zho
Published: Editorial Department of Electric Drive for Locomotives 2023-09-01
Series:机车电传动
Subjects:
4H-SiC MOSFET
total dose effect
threshold drift
gate bias
annealing
Online Access:http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2023.05.006
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