Influence and reinforcement of gate bias on total dose effect of SiC MOSFET
To address the MOSFETs threshold drift caused by the total dose effect, 1 200 V SiC MOSFETs were used for irradiation experiments. The effect and mechanism of gate bias voltage and high-temperature gate bias annealing after irradiation on the threshold drift of MOSFETs were investigated. Through the...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Department of Electric Drive for Locomotives
2023-09-01
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| Series: | 机车电传动 |
| Subjects: | |
| Online Access: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2023.05.006 |
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