Correlation Between Recombination Dynamics and Quantum Barrier Thickness in InGaN-Based Micro-LEDs
To tackle the efficiency droop, we employed an epitaxial structure engineering approach and utilized SimuLED software to thoroughly investigate the influence of the quantum barrier (QB) thickness on the performance of Micro-LEDs, and delve into the corresponding carrier transport behavior. The resul...
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| Format: | Article |
| Language: | English |
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IEEE
2025-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/10767358/ |
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| author | Mengyue Mo Ying Jiang Penggang Li Zhiqiang Liu Xu Yang Weifang Lu Jinchai Li Kai Huang Junyong Kang Rong Zhang |
| author_facet | Mengyue Mo Ying Jiang Penggang Li Zhiqiang Liu Xu Yang Weifang Lu Jinchai Li Kai Huang Junyong Kang Rong Zhang |
| author_sort | Mengyue Mo |
| collection | DOAJ |
| description | To tackle the efficiency droop, we employed an epitaxial structure engineering approach and utilized SimuLED software to thoroughly investigate the influence of the quantum barrier (QB) thickness on the performance of Micro-LEDs, and delve into the corresponding carrier transport behavior. The results demonstrate that the effect of QB thickness on the performance of Micro-LEDs is closely related to injection current density. Within the current density range of 0–30 A/cm<sup>2</sup>, a thicker QB layer leads to a higher internal quantum efficiency (IQE) for Micro-LEDs. Conversely, when the current density is in the range of 30–100 A/cm<sup>2</sup>, employing a thinner QB layer in the LED structure can yield higher IQE values. In addition, this work suggests that tunneling effects and Quantum Confined Stark Effect (QCSE) dominate at different current densities, resulting in an opposite dependency of IQE on QB thickness. Furthermore, our findings indicate that adjusting QB thickness can significantly affect both the peak external quantum efficiency (EQE) and peak current density of Micro-LEDs. |
| format | Article |
| id | doaj-art-6fe9443f94d442dfad344ce166b99905 |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-6fe9443f94d442dfad344ce166b999052025-01-15T00:00:13ZengIEEEIEEE Photonics Journal1943-06552025-01-011711710.1109/JPHOT.2024.350677910767358Correlation Between Recombination Dynamics and Quantum Barrier Thickness in InGaN-Based Micro-LEDsMengyue Mo0https://orcid.org/0009-0009-1321-2313Ying Jiang1Penggang Li2https://orcid.org/0000-0002-7943-5060Zhiqiang Liu3Xu Yang4Weifang Lu5Jinchai Li6https://orcid.org/0000-0003-3666-9120Kai Huang7https://orcid.org/0000-0002-9876-2913Junyong Kang8Rong Zhang9Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen, ChinaFujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen, ChinaFujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen, ChinaFujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen, ChinaFujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen, ChinaFujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen, ChinaFujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen, ChinaFujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen, ChinaFujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen, ChinaFujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen, ChinaTo tackle the efficiency droop, we employed an epitaxial structure engineering approach and utilized SimuLED software to thoroughly investigate the influence of the quantum barrier (QB) thickness on the performance of Micro-LEDs, and delve into the corresponding carrier transport behavior. The results demonstrate that the effect of QB thickness on the performance of Micro-LEDs is closely related to injection current density. Within the current density range of 0–30 A/cm<sup>2</sup>, a thicker QB layer leads to a higher internal quantum efficiency (IQE) for Micro-LEDs. Conversely, when the current density is in the range of 30–100 A/cm<sup>2</sup>, employing a thinner QB layer in the LED structure can yield higher IQE values. In addition, this work suggests that tunneling effects and Quantum Confined Stark Effect (QCSE) dominate at different current densities, resulting in an opposite dependency of IQE on QB thickness. Furthermore, our findings indicate that adjusting QB thickness can significantly affect both the peak external quantum efficiency (EQE) and peak current density of Micro-LEDs.https://ieeexplore.ieee.org/document/10767358/QB thicknessQCSErecombination dynamicstunneling effects |
| spellingShingle | Mengyue Mo Ying Jiang Penggang Li Zhiqiang Liu Xu Yang Weifang Lu Jinchai Li Kai Huang Junyong Kang Rong Zhang Correlation Between Recombination Dynamics and Quantum Barrier Thickness in InGaN-Based Micro-LEDs IEEE Photonics Journal QB thickness QCSE recombination dynamics tunneling effects |
| title | Correlation Between Recombination Dynamics and Quantum Barrier Thickness in InGaN-Based Micro-LEDs |
| title_full | Correlation Between Recombination Dynamics and Quantum Barrier Thickness in InGaN-Based Micro-LEDs |
| title_fullStr | Correlation Between Recombination Dynamics and Quantum Barrier Thickness in InGaN-Based Micro-LEDs |
| title_full_unstemmed | Correlation Between Recombination Dynamics and Quantum Barrier Thickness in InGaN-Based Micro-LEDs |
| title_short | Correlation Between Recombination Dynamics and Quantum Barrier Thickness in InGaN-Based Micro-LEDs |
| title_sort | correlation between recombination dynamics and quantum barrier thickness in ingan based micro leds |
| topic | QB thickness QCSE recombination dynamics tunneling effects |
| url | https://ieeexplore.ieee.org/document/10767358/ |
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