Correlation Between Recombination Dynamics and Quantum Barrier Thickness in InGaN-Based Micro-LEDs

Correlation Between Recombination Dynamics and Quantum Barrier Thickness in InGaN-Based Micro-LEDs

To tackle the efficiency droop, we employed an epitaxial structure engineering approach and utilized SimuLED software to thoroughly investigate the influence of the quantum barrier (QB) thickness on the performance of Micro-LEDs, and delve into the corresponding carrier transport behavior. The resul...

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Bibliographic Details
Main Authors: Mengyue Mo, Ying Jiang, Penggang Li, Zhiqiang Liu, Xu Yang, Weifang Lu, Jinchai Li, Kai Huang, Junyong Kang, Rong Zhang
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Photonics Journal
Subjects:
QB thickness
QCSE
recombination dynamics
tunneling effects
Online Access:https://ieeexplore.ieee.org/document/10767358/
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