Resolving the Relaxation of Volatile Valence Change Memory

Resolving the Relaxation of Volatile Valence Change Memory

Abstract Memristive devices based on the valence change mechanism are highly interesting candidates for data storage and hardware implementation of synapses in neuromorphic circuits. Although long‐term retention is often required for data storage applications, a slight resistance drift of the low re...

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Bibliographic Details
Main Authors: Johannes Hellwig, Carsten Funck, Sebastian Siegel, Alexandros Sarantopoulos, Dimitrios Spithouris, Stephan Menzel, Regina Dittmann
Format: Article
Language:English
Published: Wiley-VCH 2024-12-01
Series:Advanced Electronic Materials
Subjects:
memristive device
retention
VCM
Online Access:https://doi.org/10.1002/aelm.202400062
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