Resolving the Relaxation of Volatile Valence Change Memory
Abstract Memristive devices based on the valence change mechanism are highly interesting candidates for data storage and hardware implementation of synapses in neuromorphic circuits. Although long‐term retention is often required for data storage applications, a slight resistance drift of the low re...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2024-12-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400062 |
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