Topological Insulator Nanowires Made by AFM Nanopatterning: Fabrication Process and Ultra Low‐Temperature Transport Properties
Abstract Topological insulator nanostructures became an essential platform for studying novel fundamental effects emerging at the nanoscale. However, conventional nanopatterning techniques, based on electron beam lithography and reactive ion etching of films, have inherent limitations of edge precis...
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Wiley-VCH
2024-12-01
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| Series: | Advanced Physics Research |
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| Online Access: | https://doi.org/10.1002/apxr.202400108 |
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| author | Dmitry S. Yakovlev Aleksei V. Frolov Ivan A. Nazhestkin Alexei G. Temiryazev Andrey P. Orlov Jonathan Shvartzberg Sergey E. Dizhur Vladimir L. Gurtovoi Razmik Hovhannisyan Vasily S. Stolyarov |
| author_facet | Dmitry S. Yakovlev Aleksei V. Frolov Ivan A. Nazhestkin Alexei G. Temiryazev Andrey P. Orlov Jonathan Shvartzberg Sergey E. Dizhur Vladimir L. Gurtovoi Razmik Hovhannisyan Vasily S. Stolyarov |
| author_sort | Dmitry S. Yakovlev |
| collection | DOAJ |
| description | Abstract Topological insulator nanostructures became an essential platform for studying novel fundamental effects emerging at the nanoscale. However, conventional nanopatterning techniques, based on electron beam lithography and reactive ion etching of films, have inherent limitations of edge precision, resolution, and modification of surface properties, all of which are critical factors for topological insulator materials. In this study, an alternative approach for the fabrication of ultrathin Bi2Se3 nanoribbons is introduced by utilizing a diamond tip of an atomic force microscope (AFM) to cut atomically thin exfoliated films. This study includes an investigation of the magnetotransport properties of ultrathin Bi2Se3 topological insulator nanoribbons with controlled cross‐sections at ultra‐low 14 mK) temperatures. Current‐dependent magnetoresistance oscillations are observed with the weak antilocalization effect, confirming the coherent propagation of 2D electrons around the nanoribbon surface's perimeter and the robustness of topologically protected surface states. In contrast to conventional lithography methods, this approach does not require a highly controlled clean room environment and can be executed under ambient conditions. Importantly, this method facilitates the precise patterning and can be applied to a wide range of 2D materials. |
| format | Article |
| id | doaj-art-379e664bb8054440b5b6c4fd4b16a23f |
| institution | Kabale University |
| issn | 2751-1200 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Physics Research |
| spelling | doaj-art-379e664bb8054440b5b6c4fd4b16a23f2024-12-11T08:07:14ZengWiley-VCHAdvanced Physics Research2751-12002024-12-01312n/an/a10.1002/apxr.202400108Topological Insulator Nanowires Made by AFM Nanopatterning: Fabrication Process and Ultra Low‐Temperature Transport PropertiesDmitry S. Yakovlev0Aleksei V. Frolov1Ivan A. Nazhestkin2Alexei G. Temiryazev3Andrey P. Orlov4Jonathan Shvartzberg5Sergey E. Dizhur6Vladimir L. Gurtovoi7Razmik Hovhannisyan8Vasily S. Stolyarov9Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, CNRS PSL University Paris 75005 FranceKotel'nikov Institute of Radioengineering and Electronics of RAS Mokhovaya str. 11‐7 Moscow 125009 RussiaRussian Quantum Center 30 Bolshoi boul. Skolkovo 143025 Moscow Region RussiaKotel'nikov Institute of Radioengineering and Electronics of RAS Fryazino Branch Vvedensky Sq. 1 Fryazino 141190 Moscow Region RussiaKotel'nikov Institute of Radioengineering and Electronics of RAS Mokhovaya str. 11‐7 Moscow 125009 RussiaInstitute of Superconductivity and Institute of Nanotechnology Department of Physics Bar‐Ilan University Ramat‐Gan 5290002 IsraelDepartment of Condensed Matter Physics Weizmann Institute of Science Herzl Street Rehovot 76100 IsraelRussian Quantum Center 30 Bolshoi boul. Skolkovo 143025 Moscow Region RussiaDepartment of Physics Stockholm University, AlbaNova University Center, Universitetsvägen Stockholm SE‐10691 SwedenMoscow Center for Advanced Studies Kulakova str. 20 Moscow 123592 RussiaAbstract Topological insulator nanostructures became an essential platform for studying novel fundamental effects emerging at the nanoscale. However, conventional nanopatterning techniques, based on electron beam lithography and reactive ion etching of films, have inherent limitations of edge precision, resolution, and modification of surface properties, all of which are critical factors for topological insulator materials. In this study, an alternative approach for the fabrication of ultrathin Bi2Se3 nanoribbons is introduced by utilizing a diamond tip of an atomic force microscope (AFM) to cut atomically thin exfoliated films. This study includes an investigation of the magnetotransport properties of ultrathin Bi2Se3 topological insulator nanoribbons with controlled cross‐sections at ultra‐low 14 mK) temperatures. Current‐dependent magnetoresistance oscillations are observed with the weak antilocalization effect, confirming the coherent propagation of 2D electrons around the nanoribbon surface's perimeter and the robustness of topologically protected surface states. In contrast to conventional lithography methods, this approach does not require a highly controlled clean room environment and can be executed under ambient conditions. Importantly, this method facilitates the precise patterning and can be applied to a wide range of 2D materials.https://doi.org/10.1002/apxr.202400108AFM cuttingmagneto‐resistance oscillationspulse force nanolithographytopological insulatorUCFultra‐low temperature |
| spellingShingle | Dmitry S. Yakovlev Aleksei V. Frolov Ivan A. Nazhestkin Alexei G. Temiryazev Andrey P. Orlov Jonathan Shvartzberg Sergey E. Dizhur Vladimir L. Gurtovoi Razmik Hovhannisyan Vasily S. Stolyarov Topological Insulator Nanowires Made by AFM Nanopatterning: Fabrication Process and Ultra Low‐Temperature Transport Properties Advanced Physics Research AFM cutting magneto‐resistance oscillations pulse force nanolithography topological insulator UCF ultra‐low temperature |
| title | Topological Insulator Nanowires Made by AFM Nanopatterning: Fabrication Process and Ultra Low‐Temperature Transport Properties |
| title_full | Topological Insulator Nanowires Made by AFM Nanopatterning: Fabrication Process and Ultra Low‐Temperature Transport Properties |
| title_fullStr | Topological Insulator Nanowires Made by AFM Nanopatterning: Fabrication Process and Ultra Low‐Temperature Transport Properties |
| title_full_unstemmed | Topological Insulator Nanowires Made by AFM Nanopatterning: Fabrication Process and Ultra Low‐Temperature Transport Properties |
| title_short | Topological Insulator Nanowires Made by AFM Nanopatterning: Fabrication Process and Ultra Low‐Temperature Transport Properties |
| title_sort | topological insulator nanowires made by afm nanopatterning fabrication process and ultra low temperature transport properties |
| topic | AFM cutting magneto‐resistance oscillations pulse force nanolithography topological insulator UCF ultra‐low temperature |
| url | https://doi.org/10.1002/apxr.202400108 |
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