Nanosecond laser annealing: Impact on superconducting silicon on insulator monocrystalline epilayers

Nanosecond laser annealing: Impact on superconducting silicon on insulator monocrystalline epilayers

We present superconducting monocrystalline silicon-on-insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavily pre-implanted with boron (2.5 × 1016 at./cm2, 3 keV). Superconductivity is discussed in relation to the structural, e...

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Main Authors: Y. Baron, J. L. Lábár, S. Lequien, B. Pécz, R. Daubriac, S. Kerdilès, P. Acosta Alba, C. Marcenat, D. Débarre, F. Lefloch, F. Chiodi
Format: Article
Language:English
Published: AIP Publishing LLC 2024-12-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0231177
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http://dx.doi.org/10.1063/5.0231177

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