Exploring GAA-Nanosheet, Forksheet and GAA–Forksheet Architectures: A TCAD-DTCO Study at 90 nm and 120-nm Cell Height

Exploring GAA-Nanosheet, Forksheet and GAA–Forksheet Architectures: A TCAD-DTCO Study at 90 nm and 120-nm Cell Height

This study presents a Technology Computer Aided Design (TCAD) and comprehensive Design-Technology Co-Optimization (DTCO) approach to evaluate and enhance power and performance in Gate-All-Around Nanosheet (GAA-Nsh) and Forksheet (Fsh) architectures. The analysis focuses on the impact of active width...

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Bibliographic Details
Main Authors: Gautam Gaddemane, Pieter Schuddinck, Krishna Bhuwalka, Gerhard Rzepa, Gioele Mirabelli, Anshul Gupta, Jurgen Bommels, Philippe Matagne, Dmitry Yakimets, Hao Wu, Lei Hou, Geert Hellings, Changze Liu
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
DTCO
nanosheet
Forksheet
buried power rail
backside power delivery
PPA
Online Access:https://ieeexplore.ieee.org/document/10753294/
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https://ieeexplore.ieee.org/document/10753294/

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