Resistive switching mechanisms in BiFeO3 devices with YBCO and Ag as top electrodes
The resistive switching (RS) effect in ferroelectric oxides continues to attract significant attention due to its potential applications in nonvolatile memory and neuromorphic computing devices. In this study, we investigate the RS properties of BiFeO3/YBa2Cu3O7−d (BFO/YBCO) bilayers grown on LSAT s...
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| Format: | Article |
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Elsevier
2025-02-01
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| Series: | Physics Open |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666032624000474 |
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| author | Santiago Ceballos Medina Lorena Marín Mercado Alexander Cardona-Rodríguez Mario Fernando Quiñonez Penagos César Magén Luis Alfredo Rodríguez Juan Gabriel Ramírez |
| author_facet | Santiago Ceballos Medina Lorena Marín Mercado Alexander Cardona-Rodríguez Mario Fernando Quiñonez Penagos César Magén Luis Alfredo Rodríguez Juan Gabriel Ramírez |
| author_sort | Santiago Ceballos Medina |
| collection | DOAJ |
| description | The resistive switching (RS) effect in ferroelectric oxides continues to attract significant attention due to its potential applications in nonvolatile memory and neuromorphic computing devices. In this study, we investigate the RS properties of BiFeO3/YBa2Cu3O7−d (BFO/YBCO) bilayers grown on LSAT substrates, comparing two different top-electrode materials: YBCO and Ag. The devices were fabricated using reactive sputtering at high oxygen pressure, and their RS mechanisms were investigated via current-voltage (I-V) measurements. We find all devices exhibit unipolar behavior, with symmetric RS behavior observed in devices with YBCO top electrodes and asymmetric RS in those with Ag top electrodes. Devices with YBCO top electrodes display ohmic conduction, whereas Ag top electrode devices exhibit a combination of Schottky, Poole-Frenkel emission, and spaced charge limited conduction mechanisms. Resistance versus time measurements were performed over 30 cycles with 20 different writing voltages to evaluate the ratio between the low resistance state (LRS) and high resistance state (HRS). Ag top electrodes devices consistently exhibited higher resistance ratios ‒approximately three times larger‒ compared to YBCO devices. Furthermore, better temporal stability of HRS and LRS was observed in devices with Ag top electrodes, attributed to the differences in the Fermi energy levels between YBCO, Ag and BFO. The superior performance of Ag top electrode devices, including their higher storage density and low operation parameters (0.25 V and 5 nA), highlights their potential for energy-efficient applications in future oxide-based memory and neuromorphic devices. |
| format | Article |
| id | doaj-art-f7991767a9e147ab9d1261066928e957 |
| institution | Kabale University |
| issn | 2666-0326 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Elsevier |
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| series | Physics Open |
| spelling | doaj-art-f7991767a9e147ab9d1261066928e9572025-01-06T04:08:58ZengElsevierPhysics Open2666-03262025-02-0122100249Resistive switching mechanisms in BiFeO3 devices with YBCO and Ag as top electrodesSantiago Ceballos Medina0Lorena Marín Mercado1Alexander Cardona-Rodríguez2Mario Fernando Quiñonez Penagos3César Magén4Luis Alfredo Rodríguez5Juan Gabriel Ramírez6Grupo de Películas Delgadas, Departamento de Física, Universidad Del Valle, A.A. 25360, Cali, Colombia; Centro de Excelencia en Nuevos Materiales, Universidad Del Valle, A.A. 25360, Cali, ColombiaGrupo de Películas Delgadas, Departamento de Física, Universidad Del Valle, A.A. 25360, Cali, Colombia; Centro de Excelencia en Nuevos Materiales, Universidad Del Valle, A.A. 25360, Cali, ColombiaDepartment of Physics, Universidad de Los Andes, Bogotá, 111711, ColombiaGrupo de Películas Delgadas, Departamento de Física, Universidad Del Valle, A.A. 25360, Cali, Colombia; Centro de Excelencia en Nuevos Materiales, Universidad Del Valle, A.A. 25360, Cali, ColombiaInstituto de Nanociencia y Materiales de Aragón (INMA), Departamento de Física de La Materia Condensada, Universidad de Zaragoza, 50009 Zaragoza, Spain; Laboratorio de Microscopia Avanzada (LMA), Universidad de Zaragoza, 50018, Zaragoza, SpainCentro de Excelencia en Nuevos Materiales, Universidad Del Valle, A.A. 25360, Cali, Colombia; Grupo de Transiciones de Fase y Materiales Funcionales, Departamento de Física, Universidad Del Valle, A.A. 25360, Cali, ColombiaDepartment of Physics, Universidad de Los Andes, Bogotá, 111711, Colombia; Corresponding author.The resistive switching (RS) effect in ferroelectric oxides continues to attract significant attention due to its potential applications in nonvolatile memory and neuromorphic computing devices. In this study, we investigate the RS properties of BiFeO3/YBa2Cu3O7−d (BFO/YBCO) bilayers grown on LSAT substrates, comparing two different top-electrode materials: YBCO and Ag. The devices were fabricated using reactive sputtering at high oxygen pressure, and their RS mechanisms were investigated via current-voltage (I-V) measurements. We find all devices exhibit unipolar behavior, with symmetric RS behavior observed in devices with YBCO top electrodes and asymmetric RS in those with Ag top electrodes. Devices with YBCO top electrodes display ohmic conduction, whereas Ag top electrode devices exhibit a combination of Schottky, Poole-Frenkel emission, and spaced charge limited conduction mechanisms. Resistance versus time measurements were performed over 30 cycles with 20 different writing voltages to evaluate the ratio between the low resistance state (LRS) and high resistance state (HRS). Ag top electrodes devices consistently exhibited higher resistance ratios ‒approximately three times larger‒ compared to YBCO devices. Furthermore, better temporal stability of HRS and LRS was observed in devices with Ag top electrodes, attributed to the differences in the Fermi energy levels between YBCO, Ag and BFO. The superior performance of Ag top electrode devices, including their higher storage density and low operation parameters (0.25 V and 5 nA), highlights their potential for energy-efficient applications in future oxide-based memory and neuromorphic devices.http://www.sciencedirect.com/science/article/pii/S2666032624000474 |
| spellingShingle | Santiago Ceballos Medina Lorena Marín Mercado Alexander Cardona-Rodríguez Mario Fernando Quiñonez Penagos César Magén Luis Alfredo Rodríguez Juan Gabriel Ramírez Resistive switching mechanisms in BiFeO3 devices with YBCO and Ag as top electrodes Physics Open |
| title | Resistive switching mechanisms in BiFeO3 devices with YBCO and Ag as top electrodes |
| title_full | Resistive switching mechanisms in BiFeO3 devices with YBCO and Ag as top electrodes |
| title_fullStr | Resistive switching mechanisms in BiFeO3 devices with YBCO and Ag as top electrodes |
| title_full_unstemmed | Resistive switching mechanisms in BiFeO3 devices with YBCO and Ag as top electrodes |
| title_short | Resistive switching mechanisms in BiFeO3 devices with YBCO and Ag as top electrodes |
| title_sort | resistive switching mechanisms in bifeo3 devices with ybco and ag as top electrodes |
| url | http://www.sciencedirect.com/science/article/pii/S2666032624000474 |
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