Normally-Off Trench-Gated AlGaN/GaN Current Aperture Vertical Electron Transistor with Double Superjunction
This study proposes an AlGaN/GaN current aperture vertical electron transistor (CAVET) featuring a double superjunction (SJ) to enhance breakdown voltage (BV) and investigates its electrical characteristics via technology computer-aided design (TCAD) Silvaco Atlas simulation. An additional <i>...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-12-01
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| Series: | Technologies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2227-7080/12/12/262 |
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| Summary: | This study proposes an AlGaN/GaN current aperture vertical electron transistor (CAVET) featuring a double superjunction (SJ) to enhance breakdown voltage (BV) and investigates its electrical characteristics via technology computer-aided design (TCAD) Silvaco Atlas simulation. An additional <i>p</i>-pillar was formed beneath the gate current blocking layer to create a lateral depletion region that provided a high off-state breakdown voltage. To address the tradeoff between the drain current and off-state breakdown voltage, the key design parameters were carefully optimized. The proposed device exhibited a higher off-state breakdown voltage (2933 V) than the device with a single SJ (2786 V), although the specific on-resistance of the proposed method (1.29 mΩ·cm<sup>−2</sup>) was slightly higher than that of the single SJ device (1.17 mΩ·cm<sup>−2</sup>). In addition, the reverse transfer capacitance was improved by 15.6% in the proposed device. |
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| ISSN: | 2227-7080 |