Effects of 10 keV Electron Irradiation on the Performance Degradation of SiC Schottky Diode Radiation Detectors
The silicon carbide (SiC) Schottky diode (SBD) detector in a SiC hybrid photomultiplier tube (HPMT) generates signals by receiving photocathode electrons with an energy of 10 keV. So, the performance of the SiC SBD under electron irradiation with an energy of 10 keV has an important significance for...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-10-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/15/11/1331 |
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