TCAD Simulation of Resistive Switching Devices: Impact of ReRAM Configuration on Neuromorphic Computing

TCAD Simulation of Resistive Switching Devices: Impact of ReRAM Configuration on Neuromorphic Computing

This paper presents a method for modeling ReRAM in TCAD and validating its accuracy for neuromorphic systems. The data obtained from TCAD are used to analyze the accuracy of the neuromorphic system. The switching behaviors of ReRAM are implemented using the kinetic Monte Carlo (KMC) approach. Realis...

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Bibliographic Details
Main Authors:	Seonggyeom Kim, Jonghwan Lee
Format:	Article
Language:	English
Published:	MDPI AG 2024-11-01
Series:	Nanomaterials
Subjects:	neuromorphic computing memristor TCAD (technology computer-aided design) ReRAM (resistive random-access memory) KMC (kinetic Monte Carlo)
Online Access:	https://www.mdpi.com/2079-4991/14/23/1864
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