TCAD Simulation of Resistive Switching Devices: Impact of ReRAM Configuration on Neuromorphic Computing
This paper presents a method for modeling ReRAM in TCAD and validating its accuracy for neuromorphic systems. The data obtained from TCAD are used to analyze the accuracy of the neuromorphic system. The switching behaviors of ReRAM are implemented using the kinetic Monte Carlo (KMC) approach. Realis...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-11-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/14/23/1864 |
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