High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THz

High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THz

A parabolic potential that confines charge carriers along the growth direction of quantum wells semiconductor systems is characterized by a single resonance frequency, associated to intersubband transitions. Motivated by fascinating quantum optics applications leveraging on this property, we use the...

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Bibliographic Details
Main Authors: Campagna Elena, Talamas Simola Enrico, Venanzi Tommaso, Berkmann Fritz, Corley-Wiciak Cedric, Nicotra Giuseppe, Baldassarre Leonetta, Capellini Giovanni, Di Gaspare Luciana, Virgilio Michele, Ortolani Michele, De Seta Monica
Format: Article
Language:English
Published: De Gruyter 2024-01-01
Series:Nanophotonics
Subjects:
heterostructures
germanium
terahertz
strong coupling
parabolic potential
Online Access:https://doi.org/10.1515/nanoph-2023-0704
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https://doi.org/10.1515/nanoph-2023-0704

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