Steep slope threshold switching field‐effect transistors based on 2D heterostructure
Abstract In dealing with the increasing power dissipation of electronic systems with increasing integration density, a field‐effect transistor (FET) with steep switching slope that overcomes the thermionic limit is vital to achieve low‐power operations. Here, we report two types of threshold switchi...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2024-12-01
|
| Series: | SmartMat |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/smm2.1283 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|