Hopping of the Center-of-Mass of Single G Centers in Silicon-on-Insulator

Hopping of the Center-of-Mass of Single G Centers in Silicon-on-Insulator

Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable electron spin triplet. The G center is a unique defect where the standard Born-Oppenheimer approximation used in sol...

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Main Authors: Alrik Durand, Yoann Baron, Péter Udvarhelyi, Félix Cache, Krithika V. R., Tobias Herzig, Mario Khoury, Sébastien Pezzagna, Jan Meijer, Jean-Michel Hartmann, Shay Reboh, Marco Abbarchi, Isabelle Robert-Philip, Adam Gali, Jean-Michel Gérard, Vincent Jacques, Guillaume Cassabois, Anaïs Dréau
Format: Article
Language:English
Published: American Physical Society 2024-12-01
Series:Physical Review X
Online Access:http://doi.org/10.1103/PhysRevX.14.041071
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http://doi.org/10.1103/PhysRevX.14.041071

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