Stabilization of a silicon double quantum dot based on a multi-dimensional gradient descent technique

With a view to long-term qubit device operation, we report on a method to stabilize a silicon double quantum dot against slow drift in a two-dimensional gate-voltage space based on a current gradient-based feedback technique. We demonstrate that, unlike conventional single-axis feedback schemes, our...

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Main Authors: Chutian Wen, Hiroki Takahashi, Sayyid Irsyadul Ibad, Shimpei Nishiyama, Kimihiko Kato, Yongxun Liu, Shigenori Murakami, Takahiro Mori, Raisei Mizokuchi, Jun Yoneda, Tetsuo Kodera
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Applied Physics Express
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Online Access:https://doi.org/10.35848/1882-0786/ad9af8
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author Chutian Wen
Hiroki Takahashi
Sayyid Irsyadul Ibad
Shimpei Nishiyama
Kimihiko Kato
Yongxun Liu
Shigenori Murakami
Takahiro Mori
Raisei Mizokuchi
Jun Yoneda
Tetsuo Kodera
author_facet Chutian Wen
Hiroki Takahashi
Sayyid Irsyadul Ibad
Shimpei Nishiyama
Kimihiko Kato
Yongxun Liu
Shigenori Murakami
Takahiro Mori
Raisei Mizokuchi
Jun Yoneda
Tetsuo Kodera
author_sort Chutian Wen
collection DOAJ
description With a view to long-term qubit device operation, we report on a method to stabilize a silicon double quantum dot against slow drift in a two-dimensional gate-voltage space based on a current gradient-based feedback technique. We demonstrate that, unlike conventional single-axis feedback schemes, our method can maintain the double-dot potential configuration. We measure a feedback bandwidth of up to 300 mHz, consistent with the sampling rate and the digital filter cutoff frequency used in the experiment.
format Article
id doaj-art-e3ea20c6414e4769bd1b942f3ed70ec7
institution Kabale University
issn 1882-0786
language English
publishDate 2025-01-01
publisher IOP Publishing
record_format Article
series Applied Physics Express
spelling doaj-art-e3ea20c6414e4769bd1b942f3ed70ec72025-01-15T14:54:58ZengIOP PublishingApplied Physics Express1882-07862025-01-0118101500110.35848/1882-0786/ad9af8Stabilization of a silicon double quantum dot based on a multi-dimensional gradient descent techniqueChutian Wen0https://orcid.org/0000-0001-8310-7783Hiroki Takahashi1Sayyid Irsyadul Ibad2Shimpei Nishiyama3Kimihiko Kato4https://orcid.org/0000-0002-7117-0838Yongxun Liu5Shigenori Murakami6Takahiro Mori7Raisei Mizokuchi8https://orcid.org/0000-0002-0538-271XJun Yoneda9Tetsuo Kodera10https://orcid.org/0000-0002-3740-3896Department of Electrical and Electronic Engineering, Institute of Science Tokyo , O-okayama, Meguro-ku, Tokyo 152-8552, JapanDepartment of Electrical and Electronic Engineering, Institute of Science Tokyo , O-okayama, Meguro-ku, Tokyo 152-8552, JapanDepartment of Electrical and Electronic Engineering, Institute of Science Tokyo , O-okayama, Meguro-ku, Tokyo 152-8552, JapanDepartment of Electrical and Electronic Engineering, Institute of Science Tokyo , O-okayama, Meguro-ku, Tokyo 152-8552, Japan; National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, 305-8568, JapanNational Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, 305-8568, JapanNational Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, 305-8568, JapanNational Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, 305-8568, JapanNational Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, 305-8568, JapanDepartment of Electrical and Electronic Engineering, Institute of Science Tokyo , O-okayama, Meguro-ku, Tokyo 152-8552, JapanAcademy of Super Smart Society, Institute of Science Tokyo , O-okayama, Meguro-ku, Tokyo 152-8552, Japan; Department of Advanced Materials Science, University of Tokyo , Kashiwa, Chiba 277-8561, JapanDepartment of Electrical and Electronic Engineering, Institute of Science Tokyo , O-okayama, Meguro-ku, Tokyo 152-8552, JapanWith a view to long-term qubit device operation, we report on a method to stabilize a silicon double quantum dot against slow drift in a two-dimensional gate-voltage space based on a current gradient-based feedback technique. We demonstrate that, unlike conventional single-axis feedback schemes, our method can maintain the double-dot potential configuration. We measure a feedback bandwidth of up to 300 mHz, consistent with the sampling rate and the digital filter cutoff frequency used in the experiment.https://doi.org/10.35848/1882-0786/ad9af8silicon quantum dotscharge noisemulti-dimensional feedback control
spellingShingle Chutian Wen
Hiroki Takahashi
Sayyid Irsyadul Ibad
Shimpei Nishiyama
Kimihiko Kato
Yongxun Liu
Shigenori Murakami
Takahiro Mori
Raisei Mizokuchi
Jun Yoneda
Tetsuo Kodera
Stabilization of a silicon double quantum dot based on a multi-dimensional gradient descent technique
Applied Physics Express
silicon quantum dots
charge noise
multi-dimensional feedback control
title Stabilization of a silicon double quantum dot based on a multi-dimensional gradient descent technique
title_full Stabilization of a silicon double quantum dot based on a multi-dimensional gradient descent technique
title_fullStr Stabilization of a silicon double quantum dot based on a multi-dimensional gradient descent technique
title_full_unstemmed Stabilization of a silicon double quantum dot based on a multi-dimensional gradient descent technique
title_short Stabilization of a silicon double quantum dot based on a multi-dimensional gradient descent technique
title_sort stabilization of a silicon double quantum dot based on a multi dimensional gradient descent technique
topic silicon quantum dots
charge noise
multi-dimensional feedback control
url https://doi.org/10.35848/1882-0786/ad9af8
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