Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design
Abstract Due to traits of CMOS compatibility and scalability, HfO2-based ferroelectric ultrathin films are promising candidates for next-generation low-power memory devices. However, their commercialization has been hindered by reliability issues, with fatigue failure being a major impediment. Here,...
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-08-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-63048-3 |
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