Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design

Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design

Abstract Due to traits of CMOS compatibility and scalability, HfO2-based ferroelectric ultrathin films are promising candidates for next-generation low-power memory devices. However, their commercialization has been hindered by reliability issues, with fatigue failure being a major impediment. Here,...

Full description

Saved in:
Bibliographic Details
Main Authors: Chao Zhou, Yanpeng Feng, Liyang Ma, Haoliang Huang, Yangyang Si, Hailin Wang, Sizhe Huang, Jingxuan Li, Chang-Yang Kuo, Sujit Das, Yunlong Tang, Shi Liu, Zuhuang Chen
Format: Article
Language:English
Published: Nature Portfolio 2025-08-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-025-63048-3
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://doi.org/10.1038/s41467-025-63048-3

Similar Items