High-voltage FinFET with floating poly and high-k material for enhanced intrinsic gain and safe operating area
Abstract We propose a new drain-extended FinFET (DeFinFET) that can improve the intrinsic gain (g m/g ds) and the electrical safe operating area (SOA). This structure features a novel utilization of the drain potential by using a floating poly (FP) and split high-k material (HK) on the drain and dri...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2024-11-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-024-79881-3 |
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| _version_ | 1846158631454638080 |
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| author | Kyounghwan Oh Hyangwoo Kim Yijoon Kim Hyeongseok Yoo Minkeun Choi Wooyeol Maeng Sutae Kim Hyung-Jin Lee Chang-Ki Baek |
| author_facet | Kyounghwan Oh Hyangwoo Kim Yijoon Kim Hyeongseok Yoo Minkeun Choi Wooyeol Maeng Sutae Kim Hyung-Jin Lee Chang-Ki Baek |
| author_sort | Kyounghwan Oh |
| collection | DOAJ |
| description | Abstract We propose a new drain-extended FinFET (DeFinFET) that can improve the intrinsic gain (g m/g ds) and the electrical safe operating area (SOA). This structure features a novel utilization of the drain potential by using a floating poly (FP) and split high-k material (HK) on the drain and drift regions. This method effectively controls the potential drop profile within the drift region, which makes a uniform electric field distribution in the gate-on state. The evenly distributed electric field significantly increases the on-state breakdown voltage (7.33 V) compared to a conventional structure (5.89 V). In addition, it prevents the device from operating in an undesirable quasi-saturation mode, even after space charge modulation. This operation distinguishes our results from other studies, showing a notable improvement in g m/g ds. Moreover, electron accumulation is induced in the drift region, leading to a significant decrease in the on-resistance. As a result, the proposed device demonstrates clear advantages in high-voltage applications with a 45% expanded electrical SOA over conventional DeFinFET. |
| format | Article |
| id | doaj-art-e2b0893573a6459aabfc564196b89ee3 |
| institution | Kabale University |
| issn | 2045-2322 |
| language | English |
| publishDate | 2024-11-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj-art-e2b0893573a6459aabfc564196b89ee32024-11-24T12:21:07ZengNature PortfolioScientific Reports2045-23222024-11-011411910.1038/s41598-024-79881-3High-voltage FinFET with floating poly and high-k material for enhanced intrinsic gain and safe operating areaKyounghwan Oh0Hyangwoo Kim1Yijoon Kim2Hyeongseok Yoo3Minkeun Choi4Wooyeol Maeng5Sutae Kim6Hyung-Jin Lee7Chang-Ki Baek8Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH)Future IT Innovation Laboratory, Pohang University of Science and Technology (POSTECH)Department of Convergence IT Engineering, Pohang University of Science and Technology (POSTECH)Department of Convergence IT Engineering, Pohang University of Science and Technology (POSTECH)Department of Convergence IT Engineering, Pohang University of Science and Technology (POSTECH)Foundry Technology Development, Samsung Electronics., Co., LtdFoundry Technology Development, Samsung Electronics., Co., LtdFoundry Technology Development, Samsung Electronics., Co., LtdDepartment of Electrical Engineering, Pohang University of Science and Technology (POSTECH)Abstract We propose a new drain-extended FinFET (DeFinFET) that can improve the intrinsic gain (g m/g ds) and the electrical safe operating area (SOA). This structure features a novel utilization of the drain potential by using a floating poly (FP) and split high-k material (HK) on the drain and drift regions. This method effectively controls the potential drop profile within the drift region, which makes a uniform electric field distribution in the gate-on state. The evenly distributed electric field significantly increases the on-state breakdown voltage (7.33 V) compared to a conventional structure (5.89 V). In addition, it prevents the device from operating in an undesirable quasi-saturation mode, even after space charge modulation. This operation distinguishes our results from other studies, showing a notable improvement in g m/g ds. Moreover, electron accumulation is induced in the drift region, leading to a significant decrease in the on-resistance. As a result, the proposed device demonstrates clear advantages in high-voltage applications with a 45% expanded electrical SOA over conventional DeFinFET.https://doi.org/10.1038/s41598-024-79881-3 |
| spellingShingle | Kyounghwan Oh Hyangwoo Kim Yijoon Kim Hyeongseok Yoo Minkeun Choi Wooyeol Maeng Sutae Kim Hyung-Jin Lee Chang-Ki Baek High-voltage FinFET with floating poly and high-k material for enhanced intrinsic gain and safe operating area Scientific Reports |
| title | High-voltage FinFET with floating poly and high-k material for enhanced intrinsic gain and safe operating area |
| title_full | High-voltage FinFET with floating poly and high-k material for enhanced intrinsic gain and safe operating area |
| title_fullStr | High-voltage FinFET with floating poly and high-k material for enhanced intrinsic gain and safe operating area |
| title_full_unstemmed | High-voltage FinFET with floating poly and high-k material for enhanced intrinsic gain and safe operating area |
| title_short | High-voltage FinFET with floating poly and high-k material for enhanced intrinsic gain and safe operating area |
| title_sort | high voltage finfet with floating poly and high k material for enhanced intrinsic gain and safe operating area |
| url | https://doi.org/10.1038/s41598-024-79881-3 |
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