Structural and optical analysis of GaN and InxGa1-xN photodetectors fabricated by PEALD on silicon
The optical, structural, morphological and chemical properties of Gallium nitride (GaN) and Indium Gallium nitride (InxGa1-xN) thin films grown on Si (100) by plasma-assisted atomic layer deposition (PEALD) technique at a temperature of 300°C. X-ray diffraction (XRD) was performed, obtaining polycry...
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Elsevier
2025-09-01
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| Series: | Results in Engineering |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590123025025551 |
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| author | D. Tepatzi-Xahuentitla D. Cortes-Salinas D.A. Granada-Ramírez Y. Panecatl Bernal M. Pérez-González S.A. Tomás A.A. Durán-Ledezma Salvador Alcantara-Iniesta M.L. Gómez-Herrera J.G. Mendoza-Alvarez J. Alvarado |
| author_facet | D. Tepatzi-Xahuentitla D. Cortes-Salinas D.A. Granada-Ramírez Y. Panecatl Bernal M. Pérez-González S.A. Tomás A.A. Durán-Ledezma Salvador Alcantara-Iniesta M.L. Gómez-Herrera J.G. Mendoza-Alvarez J. Alvarado |
| author_sort | D. Tepatzi-Xahuentitla |
| collection | DOAJ |
| description | The optical, structural, morphological and chemical properties of Gallium nitride (GaN) and Indium Gallium nitride (InxGa1-xN) thin films grown on Si (100) by plasma-assisted atomic layer deposition (PEALD) technique at a temperature of 300°C. X-ray diffraction (XRD) was performed, obtaining polycrystalline films with hexagonal phase to corroborate the obtaining of the materials. In addition, Atomic Force Microscopy (AFM) analysis showed surface roughness, Rrms and Ra values of 2.4 and 1.97 nm for GaN, and 5 and 1.8 nm for InxGa1-xN, respectively. Ultraviolet-visible (UV–Vis) spectroscopic analysis revealed that the band gap energy is 3.44 eV for GaN and 3.15 eV for InxGa1-xN. Both materials were compositionally analyzed by Secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS), obtaining a homogeneous distribution of the elements Ga, In, and N, but indicating the formation of indium and nitrogen oxides. Finally, as photodetectors, the GaN/Si and InxGa1-xN/Si devices were evaluated with their photoresponse showing a high response to visible light, good stability and low fall/rise times (GaN: τRise = 0.06 s, τFall = 0.35 s InxGa1-xN: τRise = 0.2 s, τFall = 0.22 s). The peak responsivity was observed at 350 nm for GaN and at 400 nm for InxGa1-xN, indicating a redshift in the spectral response caused by higher indium content in the ternary alloy.These devices were fabricated using uniform nanometric films on silicon, aiming for Complementary Metal-Oxide-Semiconductor (CMOS) compatibility. |
| format | Article |
| id | doaj-art-e16cb1cf254d45a899c110d7ef32e80a |
| institution | Kabale University |
| issn | 2590-1230 |
| language | English |
| publishDate | 2025-09-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Engineering |
| spelling | doaj-art-e16cb1cf254d45a899c110d7ef32e80a2025-08-20T03:45:12ZengElsevierResults in Engineering2590-12302025-09-012710648610.1016/j.rineng.2025.106486Structural and optical analysis of GaN and InxGa1-xN photodetectors fabricated by PEALD on siliconD. Tepatzi-Xahuentitla0D. Cortes-Salinas1D.A. Granada-Ramírez2Y. Panecatl Bernal3M. Pérez-González4S.A. Tomás5A.A. Durán-Ledezma6Salvador Alcantara-Iniesta7M.L. Gómez-Herrera8J.G. Mendoza-Alvarez9J. Alvarado10Centro de Investigación en Dispositivos Semiconductores, Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla, 72570 Puebla, MexicoCentro de Investigación en Dispositivos Semiconductores, Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla, 72570 Puebla, MexicoCentro de Investigación en Dispositivos Semiconductores, Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla, 72570 Puebla, MexicoUniversidad Tecnológica de Tecamachalco, Ingeniería Tecnologías de la Información e Innovación Digital, Av. Universidad Tecnológica 1, Barrio La Villita, 75483 Tecamachalco, Puebla, Mexico.Área Académica de Matemáticas y Física, Instituto de Ciencias Básicas e Ingeniería, Universidad Autónoma del Estado de Hidalgo, Carretera Pachuca-Tulancingo Km. 4.5, Col. Carboneras, C.P. 42184 Mineral de la Reforma, Hidalgo, Mexico.Departamento de Física, Centro de Investigación y de Estudios Avanzados del I.P.N., A.P. 14-740, C.P. 07360 Ciudad de México, Mexico.Departamento de Física, Centro de Investigación y de Estudios Avanzados del I.P.N., A.P. 14-740, C.P. 07360 Ciudad de México, Mexico.; SEPI, ESIME Ticomán, Instituto Politécnico Nacional, Av. Ticomán No. 600, San José Ticomán, C.P. 07340 Ciudad de México, Mexico.Centro de Investigación en Dispositivos Semiconductores, Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla, 72570 Puebla, MexicoFacultad de Ingeniería, Universidad Autónoma de Querétaro, Cerro de las Campanas s/n, 76010 Querétaro, Mexico.Departamento de Física, Centro de Investigación y de Estudios Avanzados del I.P.N., A.P. 14-740, C.P. 07360 Ciudad de México, Mexico.Corresponding author.; Centro de Investigación en Dispositivos Semiconductores, Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla, 72570 Puebla, MexicoThe optical, structural, morphological and chemical properties of Gallium nitride (GaN) and Indium Gallium nitride (InxGa1-xN) thin films grown on Si (100) by plasma-assisted atomic layer deposition (PEALD) technique at a temperature of 300°C. X-ray diffraction (XRD) was performed, obtaining polycrystalline films with hexagonal phase to corroborate the obtaining of the materials. In addition, Atomic Force Microscopy (AFM) analysis showed surface roughness, Rrms and Ra values of 2.4 and 1.97 nm for GaN, and 5 and 1.8 nm for InxGa1-xN, respectively. Ultraviolet-visible (UV–Vis) spectroscopic analysis revealed that the band gap energy is 3.44 eV for GaN and 3.15 eV for InxGa1-xN. Both materials were compositionally analyzed by Secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS), obtaining a homogeneous distribution of the elements Ga, In, and N, but indicating the formation of indium and nitrogen oxides. Finally, as photodetectors, the GaN/Si and InxGa1-xN/Si devices were evaluated with their photoresponse showing a high response to visible light, good stability and low fall/rise times (GaN: τRise = 0.06 s, τFall = 0.35 s InxGa1-xN: τRise = 0.2 s, τFall = 0.22 s). The peak responsivity was observed at 350 nm for GaN and at 400 nm for InxGa1-xN, indicating a redshift in the spectral response caused by higher indium content in the ternary alloy.These devices were fabricated using uniform nanometric films on silicon, aiming for Complementary Metal-Oxide-Semiconductor (CMOS) compatibility.http://www.sciencedirect.com/science/article/pii/S2590123025025551GaN thin filmsInGaN thin filmsHeterostructuresPlasma-enhanced atomic layer deposition (PEALD)Photodetector |
| spellingShingle | D. Tepatzi-Xahuentitla D. Cortes-Salinas D.A. Granada-Ramírez Y. Panecatl Bernal M. Pérez-González S.A. Tomás A.A. Durán-Ledezma Salvador Alcantara-Iniesta M.L. Gómez-Herrera J.G. Mendoza-Alvarez J. Alvarado Structural and optical analysis of GaN and InxGa1-xN photodetectors fabricated by PEALD on silicon Results in Engineering GaN thin films InGaN thin films Heterostructures Plasma-enhanced atomic layer deposition (PEALD) Photodetector |
| title | Structural and optical analysis of GaN and InxGa1-xN photodetectors fabricated by PEALD on silicon |
| title_full | Structural and optical analysis of GaN and InxGa1-xN photodetectors fabricated by PEALD on silicon |
| title_fullStr | Structural and optical analysis of GaN and InxGa1-xN photodetectors fabricated by PEALD on silicon |
| title_full_unstemmed | Structural and optical analysis of GaN and InxGa1-xN photodetectors fabricated by PEALD on silicon |
| title_short | Structural and optical analysis of GaN and InxGa1-xN photodetectors fabricated by PEALD on silicon |
| title_sort | structural and optical analysis of gan and inxga1 xn photodetectors fabricated by peald on silicon |
| topic | GaN thin films InGaN thin films Heterostructures Plasma-enhanced atomic layer deposition (PEALD) Photodetector |
| url | http://www.sciencedirect.com/science/article/pii/S2590123025025551 |
| work_keys_str_mv | AT dtepatzixahuentitla structuralandopticalanalysisofganandinxga1xnphotodetectorsfabricatedbypealdonsilicon AT dcortessalinas structuralandopticalanalysisofganandinxga1xnphotodetectorsfabricatedbypealdonsilicon AT dagranadaramirez structuralandopticalanalysisofganandinxga1xnphotodetectorsfabricatedbypealdonsilicon AT ypanecatlbernal structuralandopticalanalysisofganandinxga1xnphotodetectorsfabricatedbypealdonsilicon AT mperezgonzalez structuralandopticalanalysisofganandinxga1xnphotodetectorsfabricatedbypealdonsilicon AT satomas structuralandopticalanalysisofganandinxga1xnphotodetectorsfabricatedbypealdonsilicon AT aaduranledezma structuralandopticalanalysisofganandinxga1xnphotodetectorsfabricatedbypealdonsilicon AT salvadoralcantarainiesta structuralandopticalanalysisofganandinxga1xnphotodetectorsfabricatedbypealdonsilicon AT mlgomezherrera structuralandopticalanalysisofganandinxga1xnphotodetectorsfabricatedbypealdonsilicon AT jgmendozaalvarez structuralandopticalanalysisofganandinxga1xnphotodetectorsfabricatedbypealdonsilicon AT jalvarado structuralandopticalanalysisofganandinxga1xnphotodetectorsfabricatedbypealdonsilicon |