Bifunctional Memristive Behavior of a Dual‐Layer Structure Depending on the Configuration of Charge Transport

Bifunctional Memristive Behavior of a Dual‐Layer Structure Depending on the Configuration of Charge Transport

Abstract This paper presents a method for integrating neuronal and synaptic functions within a thin dual‐layer featuring distinct dielectric strengths. The dual‐layer consists of a conductive bottom layer (e.g., MXenes or rGOs) and a top layer with a lower dielectric strength (e.g., gallium oxide)....

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Bibliographic Details
Main Authors: Suji Ha, YoungJu Park, Chanjin Lim, Eunyeong Yang, Taegil Kim, Seon Joon Kim, Junwoo Park
Format: Article
Language:English
Published: Wiley-VCH 2025-08-01
Series:Advanced Electronic Materials
Subjects:
artificial neuron
artificial synapse
charge transport
conductance switching
neuromorphic computing
Online Access:https://doi.org/10.1002/aelm.202500029
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https://doi.org/10.1002/aelm.202500029

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