Transmitted electron exposure in electron beam lithography for double-side patterning of bi-layer metasurfaces on a SiNx membrane
Metasheets, composed of two identical metasurfaces closely aligned to each other within a mode-coupling distance on the two opposite sides of a SiNx membrane, are of unique functionalities for effective modulation of electromagnetic waves by nanoscale metallic structures. Although the physical image...
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| Format: | Article |
| Language: | English |
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Elsevier
2025-09-01
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| Series: | Micro and Nano Engineering |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S259000722500019X |
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| author | Jinyu Guo Yifei Wang Hao Quan Shuoqiu Tian Qiucheng Chen Wentao Yuan Qingxin Wu Kangping Liu Yifang Chen Qiong He Lei Zhou |
| author_facet | Jinyu Guo Yifei Wang Hao Quan Shuoqiu Tian Qiucheng Chen Wentao Yuan Qingxin Wu Kangping Liu Yifang Chen Qiong He Lei Zhou |
| author_sort | Jinyu Guo |
| collection | DOAJ |
| description | Metasheets, composed of two identical metasurfaces closely aligned to each other within a mode-coupling distance on the two opposite sides of a SiNx membrane, are of unique functionalities for effective modulation of electromagnetic waves by nanoscale metallic structures. Although the physical image is readily clear, nanofabrication of such a two-sided devices with identical patterns still remains a big challenge because of the e-beam spreading caused by forward scattering in both resists and membranes. In this work, an innovative transmitted electron beam lithography (TEBL) was developed for metasheets. Three different resist stacks were tried and compared to eliminate the pattern deviation between them. A simulation study of TEBL was systematically carried out to figure out a reliable process window for replicating identical Au-gratings on the two opposite sides. The principle behind the success of replicating two identical metasurfaces on opposite sides is analyzed. The developed TEBL in this work extends the application of electron beam lithography to double-sided patterning for novel optical devices such as metasheets. |
| format | Article |
| id | doaj-art-dba5e2f20653459da6d5cb29ca55abd9 |
| institution | Kabale University |
| issn | 2590-0072 |
| language | English |
| publishDate | 2025-09-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Micro and Nano Engineering |
| spelling | doaj-art-dba5e2f20653459da6d5cb29ca55abd92025-08-20T04:01:56ZengElsevierMicro and Nano Engineering2590-00722025-09-012810031310.1016/j.mne.2025.100313Transmitted electron exposure in electron beam lithography for double-side patterning of bi-layer metasurfaces on a SiNx membraneJinyu Guo0Yifei Wang1Hao Quan2Shuoqiu Tian3Qiucheng Chen4Wentao Yuan5Qingxin Wu6Kangping Liu7Yifang Chen8Qiong He9Lei Zhou10Nanolithography and Application Research Group, School of Information Science and Technology, Fudan University, Shanghai 200433, China; Shanghai Key Laboratory of Metasurfaces for Light Manipulation, Fudan University, Shanghai 200433, ChinaState Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of Physics, Fudan University, Shanghai 200433, China; Shanghai Key Laboratory of Metasurfaces for Light Manipulation, Fudan University, Shanghai 200433, ChinaNanolithography and Application Research Group, School of Information Science and Technology, Fudan University, Shanghai 200433, China; Shanghai Key Laboratory of Metasurfaces for Light Manipulation, Fudan University, Shanghai 200433, ChinaNanolithography and Application Research Group, School of Information Science and Technology, Fudan University, Shanghai 200433, China; Shanghai Key Laboratory of Metasurfaces for Light Manipulation, Fudan University, Shanghai 200433, ChinaNanolithography and Application Research Group, School of Information Science and Technology, Fudan University, Shanghai 200433, China; Shanghai Key Laboratory of Metasurfaces for Light Manipulation, Fudan University, Shanghai 200433, ChinaNanolithography and Application Research Group, School of Information Science and Technology, Fudan University, Shanghai 200433, China; Shanghai Key Laboratory of Metasurfaces for Light Manipulation, Fudan University, Shanghai 200433, ChinaNanolithography and Application Research Group, School of Information Science and Technology, Fudan University, Shanghai 200433, China; Shanghai Key Laboratory of Metasurfaces for Light Manipulation, Fudan University, Shanghai 200433, ChinaNanolithography and Application Research Group, School of Information Science and Technology, Fudan University, Shanghai 200433, China; Shanghai Key Laboratory of Metasurfaces for Light Manipulation, Fudan University, Shanghai 200433, ChinaNanolithography and Application Research Group, School of Information Science and Technology, Fudan University, Shanghai 200433, China; Shanghai Key Laboratory of Metasurfaces for Light Manipulation, Fudan University, Shanghai 200433, China; Corresponding author at: Nanolithography and Application Research Group, School of Information Science and Technology, Fudan University, Shanghai 200433, China. State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of Physics, Fudan University, Shanghai 200433, China.State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of Physics, Fudan University, Shanghai 200433, China; Shanghai Key Laboratory of Metasurfaces for Light Manipulation, Fudan University, Shanghai 200433, China; Corresponding authors at: State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of Physics, Fudan University, Shanghai 200433, China. Shanghai Key Laboratory of Metasurfaces for Light Manipulation, Fudan University, Shanghai 200433, China.State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of Physics, Fudan University, Shanghai 200433, China; Shanghai Key Laboratory of Metasurfaces for Light Manipulation, Fudan University, Shanghai 200433, China; Corresponding authors at: State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of Physics, Fudan University, Shanghai 200433, China. Shanghai Key Laboratory of Metasurfaces for Light Manipulation, Fudan University, Shanghai 200433, China.Metasheets, composed of two identical metasurfaces closely aligned to each other within a mode-coupling distance on the two opposite sides of a SiNx membrane, are of unique functionalities for effective modulation of electromagnetic waves by nanoscale metallic structures. Although the physical image is readily clear, nanofabrication of such a two-sided devices with identical patterns still remains a big challenge because of the e-beam spreading caused by forward scattering in both resists and membranes. In this work, an innovative transmitted electron beam lithography (TEBL) was developed for metasheets. Three different resist stacks were tried and compared to eliminate the pattern deviation between them. A simulation study of TEBL was systematically carried out to figure out a reliable process window for replicating identical Au-gratings on the two opposite sides. The principle behind the success of replicating two identical metasurfaces on opposite sides is analyzed. The developed TEBL in this work extends the application of electron beam lithography to double-sided patterning for novel optical devices such as metasheets.http://www.sciencedirect.com/science/article/pii/S259000722500019X |
| spellingShingle | Jinyu Guo Yifei Wang Hao Quan Shuoqiu Tian Qiucheng Chen Wentao Yuan Qingxin Wu Kangping Liu Yifang Chen Qiong He Lei Zhou Transmitted electron exposure in electron beam lithography for double-side patterning of bi-layer metasurfaces on a SiNx membrane Micro and Nano Engineering |
| title | Transmitted electron exposure in electron beam lithography for double-side patterning of bi-layer metasurfaces on a SiNx membrane |
| title_full | Transmitted electron exposure in electron beam lithography for double-side patterning of bi-layer metasurfaces on a SiNx membrane |
| title_fullStr | Transmitted electron exposure in electron beam lithography for double-side patterning of bi-layer metasurfaces on a SiNx membrane |
| title_full_unstemmed | Transmitted electron exposure in electron beam lithography for double-side patterning of bi-layer metasurfaces on a SiNx membrane |
| title_short | Transmitted electron exposure in electron beam lithography for double-side patterning of bi-layer metasurfaces on a SiNx membrane |
| title_sort | transmitted electron exposure in electron beam lithography for double side patterning of bi layer metasurfaces on a sinx membrane |
| url | http://www.sciencedirect.com/science/article/pii/S259000722500019X |
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