Influence of rapid thermal annealing in vacuum on the resistive switching of Cu/ZnO/ITO devices

Influence of rapid thermal annealing in vacuum on the resistive switching of Cu/ZnO/ITO devices

In this paper, we investigate the resistive switching (RS) behavior of Cu/ZnO/ITO devices subjected to various rapid thermal annealing (RTA) temperatures under vacuum. Current–voltage characteristics reveal that following the application of a positive electroforming voltage, both unannealed ZnO film...

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Bibliographic Details
Main Authors: Tai-Min Liu, Zong-Wei Wu, Chien-Chen Lee, Pin-Qian Yang, Hua-Shu Hsu, Fang-Yuh Lo
Format: Article
Language:English
Published: AIP Publishing LLC 2024-11-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0241913
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