Lattice Boundary Enhancement on Thermoelectric Behaviors of Heavily Boron‐Doped Silicon for Energy Harvesting: Electrical versus Thermal Conductivity

Lattice Boundary Enhancement on Thermoelectric Behaviors of Heavily Boron‐Doped Silicon for Energy Harvesting: Electrical versus Thermal Conductivity

Abstract Green energy collection is crucial for achieving future net‐zero carbon emissions, with energy harvesting being a key solution. Silicon, a widely used p‐type semiconductor doped with boron ions, is prevalent in modern electronics. However, the impact of lattice boundaries from ion implantat...

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Bibliographic Details
Main Authors: Shang Yu Tsai, Po‐Hsien Tseng, Chun Chi Chen, Cheng‐Ming Huang, Hung‐Wei Yen, Yi‐Sheng Chen, Kun‐Lin Lin, Ranming Niu, Yu‐Sheng Lai, Fu‐Hsiang Ko
Format: Article
Language:English
Published: Wiley-VCH 2024-12-01
Series:Advanced Materials Interfaces
Subjects:
atom probe tomography
block of phonon penetration
boron interstitial‐formed boundaries
heavily boron‐doped silicon layer
thermoelectricity
Online Access:https://doi.org/10.1002/admi.202400536
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https://doi.org/10.1002/admi.202400536

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