Research on Switching Behavior of High Power IGBT5 Module
It investigated the switching characteristics of IGBT5 P5 chip for the requirement of higher power density output and high reliability in practical application. From test bench of component level, it was further analyzed how to influence the turn-on and turn-off process by external parameters like g...
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| Main Authors: | , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2017-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.02.006 |
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| Summary: | It investigated the switching characteristics of IGBT5 P5 chip for the requirement of higher power density output and high reliability in practical application. From test bench of component level, it was further analyzed how to influence the turn-on and turn-off process by external parameters like gate resistor, gate voltage and junction temperature, short pulse etc. The abnormal switching phenomena during test were explained from the view of semiconductor mechanism. It is obviously concluded to be the strong robustness and high stability of IGBT5 switching characteristic during normal and abnormal condition. |
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| ISSN: | 2096-5427 |