Research on the Temperature Characteristics of 1 200 V 4H-SiC Junction Barrier Schottky Diode
In order to research the effect of temperature on static electrical parameters of 4H–SiC junction barrier Schottky (JBS) diode,1.2 kV 4H–SiC JBS diodes were fabricated and their current-voltage characteristics were measured in the range of 25 ℃ ~150 ℃ . The results illustrate the forward current is...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2016-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.012 |
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