Enhancing InGaZnO transistor current through high-κ dielectrics and interface trap extraction using single-pulse charge pumping

Enhancing InGaZnO transistor current through high-κ dielectrics and interface trap extraction using single-pulse charge pumping

Abstract Enhancing the drive current of oxide semiconductor transistors is crucial for enabling high-resolution displays with thin bezels and improving memory write and access speeds. High-mobility channel materials boost drive current but typically require stricter process control and reliability,...

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Main Authors: JaeHyeong Park, Hyo-Bae Kim, Sang Min Yu, Kihwan Kim, Ju Heyuck Baeck, Jiyong Noh, Kwon-Shik Park, Soo-Young Yoon, Ji-Hoon Ahn, Saeroonter Oh
Format: Article
Language:English
Published: Nature Portfolio 2025-07-01
Series:Scientific Reports
Subjects:
High-κ gate dielectric
InGaZnO transistors
Single-pulse charge pumping
Interface traps
Oxide semiconductors
Online Access:https://doi.org/10.1038/s41598-025-07995-3
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https://doi.org/10.1038/s41598-025-07995-3

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