Thin film field-effect transistor with ZnO:Li ferroelectric channel
An n-type channel transparent thin film field-effect transistor (FET) using a top-gate configuration on a sapphire substrate is presented. ZnO:Li film was used as a channel, and MgF2 film as a gate insulator. Measurements showed that ZnO:Li films are ferroelectrics with spontaneous polarization [For...
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| Language: | English |
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World Scientific Publishing
2025-02-01
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| Series: | Journal of Advanced Dielectrics |
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| Online Access: | https://www.worldscientific.com/doi/10.1142/S2010135X24500097 |
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| author | Armen Poghosyan Ruben Hovsepyan Hrachya Mnatsakanyan |
| author_facet | Armen Poghosyan Ruben Hovsepyan Hrachya Mnatsakanyan |
| author_sort | Armen Poghosyan |
| collection | DOAJ |
| description | An n-type channel transparent thin film field-effect transistor (FET) using a top-gate configuration on a sapphire substrate is presented. ZnO:Li film was used as a channel, and MgF2 film as a gate insulator. Measurements showed that ZnO:Li films are ferroelectrics with spontaneous polarization [Formula: see text]–5[Formula: see text][Formula: see text]C/cm2 and coercive field [Formula: see text]–10[Formula: see text]kV/cm. The dependences of drain–source current on drain–source voltage at various gate–source voltages in two antiparallel [Formula: see text] states were measured and the values of field-effect mobility and threshold voltage were determined for two [Formula: see text] states are as follows: (a) [Formula: see text][Formula: see text]cm2/Vs, [Formula: see text][Formula: see text]V; (b) [Formula: see text][Formula: see text]cm2/Vs, [Formula: see text][Formula: see text]V. Thus, [Formula: see text] switching leads to a change in FET channel parameters. Results can be used to create a bistable or, more precisely, digital FET. |
| format | Article |
| id | doaj-art-cb530918bc7a427f862619a109e40553 |
| institution | Kabale University |
| issn | 2010-135X 2010-1368 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | World Scientific Publishing |
| record_format | Article |
| series | Journal of Advanced Dielectrics |
| spelling | doaj-art-cb530918bc7a427f862619a109e405532025-01-06T00:55:11ZengWorld Scientific PublishingJournal of Advanced Dielectrics2010-135X2010-13682025-02-01150110.1142/S2010135X24500097Thin film field-effect transistor with ZnO:Li ferroelectric channelArmen Poghosyan0Ruben Hovsepyan1Hrachya Mnatsakanyan2Institute for Physical Research, Ashtarak 0203, ArmeniaInstitute for Physical Research, Ashtarak 0203, ArmeniaInstitute for Physical Research, Ashtarak 0203, ArmeniaAn n-type channel transparent thin film field-effect transistor (FET) using a top-gate configuration on a sapphire substrate is presented. ZnO:Li film was used as a channel, and MgF2 film as a gate insulator. Measurements showed that ZnO:Li films are ferroelectrics with spontaneous polarization [Formula: see text]–5[Formula: see text][Formula: see text]C/cm2 and coercive field [Formula: see text]–10[Formula: see text]kV/cm. The dependences of drain–source current on drain–source voltage at various gate–source voltages in two antiparallel [Formula: see text] states were measured and the values of field-effect mobility and threshold voltage were determined for two [Formula: see text] states are as follows: (a) [Formula: see text][Formula: see text]cm2/Vs, [Formula: see text][Formula: see text]V; (b) [Formula: see text][Formula: see text]cm2/Vs, [Formula: see text][Formula: see text]V. Thus, [Formula: see text] switching leads to a change in FET channel parameters. Results can be used to create a bistable or, more precisely, digital FET.https://www.worldscientific.com/doi/10.1142/S2010135X24500097Transparent field-effect transistorZnO thin filmsferroelectric semiconductor channeltransparent electronics |
| spellingShingle | Armen Poghosyan Ruben Hovsepyan Hrachya Mnatsakanyan Thin film field-effect transistor with ZnO:Li ferroelectric channel Journal of Advanced Dielectrics Transparent field-effect transistor ZnO thin films ferroelectric semiconductor channel transparent electronics |
| title | Thin film field-effect transistor with ZnO:Li ferroelectric channel |
| title_full | Thin film field-effect transistor with ZnO:Li ferroelectric channel |
| title_fullStr | Thin film field-effect transistor with ZnO:Li ferroelectric channel |
| title_full_unstemmed | Thin film field-effect transistor with ZnO:Li ferroelectric channel |
| title_short | Thin film field-effect transistor with ZnO:Li ferroelectric channel |
| title_sort | thin film field effect transistor with zno li ferroelectric channel |
| topic | Transparent field-effect transistor ZnO thin films ferroelectric semiconductor channel transparent electronics |
| url | https://www.worldscientific.com/doi/10.1142/S2010135X24500097 |
| work_keys_str_mv | AT armenpoghosyan thinfilmfieldeffecttransistorwithznoliferroelectricchannel AT rubenhovsepyan thinfilmfieldeffecttransistorwithznoliferroelectricchannel AT hrachyamnatsakanyan thinfilmfieldeffecttransistorwithznoliferroelectricchannel |