Barrier Inhomogeneity of Pt/GaN Junctions with a Low-Temperature ALD Grown ZnO Interlayer
Semiconducting GaN can realize high performance electronic and power devices owing to its high electron mobility and thermal conductivity where good metal-semiconductor contact is prerequisite. In this work, using thermal atomic layer deposition (ALD), ZnO interlayer was grown at 80°C on GaN and the...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Polish Academy of Sciences
2024-06-01
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| Series: | Archives of Metallurgy and Materials |
| Subjects: | |
| Online Access: | https://journals.pan.pl/Content/131843/AMM-2024-2-14-Byung%20Joon%20Choi.pdf |
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