A machine learning framework for predictive electron density modelling to enhance 3D NAND flash memory performance
Data storage in electronic devices has been revolutionised by 3D NAND flash memory. However, polycrystalline silicon and grain boundaries offer issues that greatly affect memory performance in terms of string current and Program-Erase Threshold Voltage window (Vt –Window). Scientists need to learn m...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-12-01
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| Series: | e-Prime: Advances in Electrical Engineering, Electronics and Energy |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S277267112400370X |
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