Robust single modified divacancy color centers in 4H-SiC under resonant excitation

Robust single modified divacancy color centers in 4H-SiC under resonant excitation

Abstract Color centers in silicon carbide (SiC) offer exciting possibilities for quantum information processing. However, the challenge of ionization during optical manipulation leads to charge variations, hampering the efficacy of spin-photon interfaces. Recent research predicted that modified diva...

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Main Authors: Zhen-Xuan He, Ji-Yang Zhou, Qiang Li, Wu-Xi Lin, Rui-Jian Liang, Jun-Feng Wang, Xiao-Lei Wen, Zhi-He Hao, Wei Liu, Shuo Ren, Hao Li, Li-Xing You, Rui-Jun Zhang, Feng Zhang, Jian-Shun Tang, Jin-Shi Xu, Chuan-Feng Li, Guang-Can Guo
Format: Article
Language:English
Published: Nature Portfolio 2024-11-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-024-53662-y
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https://doi.org/10.1038/s41467-024-53662-y

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