APA (7th ed.) Citation

Mounika, B., Ajayan, J., Bhattacharya, S., Nirmal, D., & Dwivedi, A. K. LG = 50 nm T-gated and Fe-doped double quantum well GaN‒HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications. Elsevier.

Chicago Style (17th ed.) Citation

Mounika, B., J. Ajayan, Sandip Bhattacharya, D. Nirmal, and Amit Krishna Dwivedi. LG = 50 nm T-gated and Fe-doped Double Quantum Well GaN‒HEMT on SiC Wafer with Graded AlGaN Barrier for Future Power Electronics Applications. Elsevier.

MLA (9th ed.) Citation

Mounika, B., et al. LG = 50 nm T-gated and Fe-doped Double Quantum Well GaN‒HEMT on SiC Wafer with Graded AlGaN Barrier for Future Power Electronics Applications. Elsevier.