Effects of Hydrogen Plasma on the Electrical Properties of F-Doped ZnO Thin Films and p-i-n α-Si:H Thin Film Solar Cells

1.5 wt% zinc fluoride (ZnF2) was mixed with zinc oxide powder to form the F-doped ZnO (FZO) composition. At first, the FZO thin films were deposited at room temperature and 5×10-3 Torr in pure Ar under different deposition power. Hall measurements of the as-deposited FZO thin films were investigated...

Full description

Saved in:
Bibliographic Details
Main Authors: Fang-Hsing Wang, Shang-Chao Hung, Cheng-Fu Yang, Yen-Hsien Lee
Format: Article
Language:English
Published: Wiley 2014-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2014/425057
Tags: Add Tag
No Tags, Be the first to tag this record!