Advances in Room Temperature of Indium Aluminum Nitride InAlN Deposition via Direct Current (DC) Co-Sputtering for Solar Energy Applications

Advances in Room Temperature of Indium Aluminum Nitride InAlN Deposition via Direct Current (DC) Co-Sputtering for Solar Energy Applications

This study presents an innovative method for the synthesis of indium aluminum nitride (InAlN) layers by direct current (DC) co-sputtering at room temperature, with the aim of reducing production costs of optoelectronic devices. Indium and aluminum targets are used, varying the power applied to the a...

Full description

Saved in:
Bibliographic Details
Main Authors: Juan David Cañón-Bermúdez, Luis Fernando Mulcué-Nieto
Format: Article
Language:English
Published: MDPI AG 2024-10-01
Series:Energies
Subjects:
InAlN solar cells
co-sputtering DC
room temperature
optical properties
morphological properties
low-cost synthesis
Online Access:https://www.mdpi.com/1996-1073/17/21/5447
Tags: Add Tag
No Tags, Be the first to tag this record!

Similar Items

Similar Items