Advances in Room Temperature of Indium Aluminum Nitride InAlN Deposition via Direct Current (DC) Co-Sputtering for Solar Energy Applications

Advances in Room Temperature of Indium Aluminum Nitride InAlN Deposition via Direct Current (DC) Co-Sputtering for Solar Energy Applications

This study presents an innovative method for the synthesis of indium aluminum nitride (InAlN) layers by direct current (DC) co-sputtering at room temperature, with the aim of reducing production costs of optoelectronic devices. Indium and aluminum targets are used, varying the power applied to the a...

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Bibliographic Details
Main Authors: Juan David Cañón-Bermúdez, Luis Fernando Mulcué-Nieto
Format: Article
Language:English
Published: MDPI AG 2024-10-01
Series:Energies
Subjects:
InAlN solar cells
co-sputtering DC
room temperature
optical properties
morphological properties
low-cost synthesis
Online Access:https://www.mdpi.com/1996-1073/17/21/5447
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