Advances in Room Temperature of Indium Aluminum Nitride InAlN Deposition via Direct Current (DC) Co-Sputtering for Solar Energy Applications
This study presents an innovative method for the synthesis of indium aluminum nitride (InAlN) layers by direct current (DC) co-sputtering at room temperature, with the aim of reducing production costs of optoelectronic devices. Indium and aluminum targets are used, varying the power applied to the a...
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MDPI AG
2024-10-01
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| Series: | Energies |
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| Online Access: | https://www.mdpi.com/1996-1073/17/21/5447 |
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| author | Juan David Cañón-Bermúdez Luis Fernando Mulcué-Nieto |
| author_facet | Juan David Cañón-Bermúdez Luis Fernando Mulcué-Nieto |
| author_sort | Juan David Cañón-Bermúdez |
| collection | DOAJ |
| description | This study presents an innovative method for the synthesis of indium aluminum nitride (InAlN) layers by direct current (DC) co-sputtering at room temperature, with the aim of reducing production costs of optoelectronic devices. Indium and aluminum targets are used, varying the power applied to the aluminum target. The results show that increasing the target power favors the formation of aluminum nitride (AlN), which modifies the chemical composition of the material. The layers obtained present smooth surfaces with a roughness of less than 3 nm, which is beneficial for applications requiring interfaces with low defect density. Regarding the optical properties, it is observed that the optical bandgap varies between 1.8 eV and 2.0 eV, increasing with the target power. Hall effect measurements indicate a decrease in the free carrier concentration and an increase in the resistivity with increasing power. This approach allows for the synthesis of InAlN with properties suitable for optoelectronic applications, solar cells, photocatalysis, and photoelectrocatalysis at low cost. |
| format | Article |
| id | doaj-art-b8dcdf6bd9414b7da3419de80cfd8158 |
| institution | Kabale University |
| issn | 1996-1073 |
| language | English |
| publishDate | 2024-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Energies |
| spelling | doaj-art-b8dcdf6bd9414b7da3419de80cfd81582024-11-08T14:35:44ZengMDPI AGEnergies1996-10732024-10-011721544710.3390/en17215447Advances in Room Temperature of Indium Aluminum Nitride InAlN Deposition via Direct Current (DC) Co-Sputtering for Solar Energy ApplicationsJuan David Cañón-Bermúdez0Luis Fernando Mulcué-Nieto1Departamento de Física y Química, Facultad de Ciencias Exactas y Naturales, Universidad Nacional de Colombia Sede Manizales, Carrera 27 # 64-60, Manizales 176007, ColombiaDepartamento de Física y Química, Facultad de Ciencias Exactas y Naturales, Universidad Nacional de Colombia Sede Manizales, Carrera 27 # 64-60, Manizales 176007, ColombiaThis study presents an innovative method for the synthesis of indium aluminum nitride (InAlN) layers by direct current (DC) co-sputtering at room temperature, with the aim of reducing production costs of optoelectronic devices. Indium and aluminum targets are used, varying the power applied to the aluminum target. The results show that increasing the target power favors the formation of aluminum nitride (AlN), which modifies the chemical composition of the material. The layers obtained present smooth surfaces with a roughness of less than 3 nm, which is beneficial for applications requiring interfaces with low defect density. Regarding the optical properties, it is observed that the optical bandgap varies between 1.8 eV and 2.0 eV, increasing with the target power. Hall effect measurements indicate a decrease in the free carrier concentration and an increase in the resistivity with increasing power. This approach allows for the synthesis of InAlN with properties suitable for optoelectronic applications, solar cells, photocatalysis, and photoelectrocatalysis at low cost.https://www.mdpi.com/1996-1073/17/21/5447InAlN solar cellsco-sputtering DCroom temperatureoptical propertiesmorphological propertieslow-cost synthesis |
| spellingShingle | Juan David Cañón-Bermúdez Luis Fernando Mulcué-Nieto Advances in Room Temperature of Indium Aluminum Nitride InAlN Deposition via Direct Current (DC) Co-Sputtering for Solar Energy Applications Energies InAlN solar cells co-sputtering DC room temperature optical properties morphological properties low-cost synthesis |
| title | Advances in Room Temperature of Indium Aluminum Nitride InAlN Deposition via Direct Current (DC) Co-Sputtering for Solar Energy Applications |
| title_full | Advances in Room Temperature of Indium Aluminum Nitride InAlN Deposition via Direct Current (DC) Co-Sputtering for Solar Energy Applications |
| title_fullStr | Advances in Room Temperature of Indium Aluminum Nitride InAlN Deposition via Direct Current (DC) Co-Sputtering for Solar Energy Applications |
| title_full_unstemmed | Advances in Room Temperature of Indium Aluminum Nitride InAlN Deposition via Direct Current (DC) Co-Sputtering for Solar Energy Applications |
| title_short | Advances in Room Temperature of Indium Aluminum Nitride InAlN Deposition via Direct Current (DC) Co-Sputtering for Solar Energy Applications |
| title_sort | advances in room temperature of indium aluminum nitride inaln deposition via direct current dc co sputtering for solar energy applications |
| topic | InAlN solar cells co-sputtering DC room temperature optical properties morphological properties low-cost synthesis |
| url | https://www.mdpi.com/1996-1073/17/21/5447 |
| work_keys_str_mv | AT juandavidcanonbermudez advancesinroomtemperatureofindiumaluminumnitrideinalndepositionviadirectcurrentdccosputteringforsolarenergyapplications AT luisfernandomulcuenieto advancesinroomtemperatureofindiumaluminumnitrideinalndepositionviadirectcurrentdccosputteringforsolarenergyapplications |