Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems
Abstract The discovery of ferroelectricity in hafnium oxide has propelled ferroelectric devices to the forefront of nanoelectronics, offering distinct advantages over alternative technologies. Ferroelectric memories, such as Ferroelectric Random Access Memories (FeRAM) and the Ferroelectric Field Ef...
Saved in:
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-05-01
|
| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400686 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849327980162056192 |
|---|---|
| author | David Lehninger Franz Müller Yannick Raffel Shouzhuo Yang Markus Neuber Sukhrob Abdulazhanov Thomas Kämpfe Konrad Seidel Maximilian Lederer |
| author_facet | David Lehninger Franz Müller Yannick Raffel Shouzhuo Yang Markus Neuber Sukhrob Abdulazhanov Thomas Kämpfe Konrad Seidel Maximilian Lederer |
| author_sort | David Lehninger |
| collection | DOAJ |
| description | Abstract The discovery of ferroelectricity in hafnium oxide has propelled ferroelectric devices to the forefront of nanoelectronics, offering distinct advantages over alternative technologies. Ferroelectric memories, such as Ferroelectric Random Access Memories (FeRAM) and the Ferroelectric Field Effect Transistor (FeFET), combine non‐volatility with high‐speed operation and low power consumption, though they contend with specific challenges, including variability and endurance limitations. Meanwhile, piezoelectric and pyroelectric sensors/actuators exploit the capability of ferroelectric materials to interconvert mechanical or thermal energy with electrical signals. These sensors demonstrate exceptional sensitivity, though factors such as material fatigue and temperature stability can impact their performance. Additionally, radio frequency devices, particularly varactors, utilize ferroelectric materials to enable tunable capacitance, enhancing dynamic control. This review assesses the advantages and current challenges across these technologies, offering insights into prospective solutions. |
| format | Article |
| id | doaj-art-b70a1d1a267a4e54bcd42aa2fe4641f0 |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-05-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-b70a1d1a267a4e54bcd42aa2fe4641f02025-08-20T03:47:41ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-05-01117n/an/a10.1002/aelm.202400686Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and SystemsDavid Lehninger0Franz Müller1Yannick Raffel2Shouzhuo Yang3Markus Neuber4Sukhrob Abdulazhanov5Thomas Kämpfe6Konrad Seidel7Maximilian Lederer8Fraunhofer Institute for Photonic Microsystems IPMS Center Nanoelectronic Technologies (CNT) 01109 Dresden GermanyFraunhofer Institute for Photonic Microsystems IPMS Center Nanoelectronic Technologies (CNT) 01109 Dresden GermanyFraunhofer Institute for Photonic Microsystems IPMS Center Nanoelectronic Technologies (CNT) 01109 Dresden GermanyFraunhofer Institute for Photonic Microsystems IPMS Center Nanoelectronic Technologies (CNT) 01109 Dresden GermanyFraunhofer Institute for Photonic Microsystems IPMS Center Nanoelectronic Technologies (CNT) 01109 Dresden GermanyFraunhofer Institute for Photonic Microsystems IPMS Center Nanoelectronic Technologies (CNT) 01109 Dresden GermanyFraunhofer Institute for Photonic Microsystems IPMS Center Nanoelectronic Technologies (CNT) 01109 Dresden GermanyFraunhofer Institute for Photonic Microsystems IPMS Center Nanoelectronic Technologies (CNT) 01109 Dresden GermanyFraunhofer Institute for Photonic Microsystems IPMS Center Nanoelectronic Technologies (CNT) 01109 Dresden GermanyAbstract The discovery of ferroelectricity in hafnium oxide has propelled ferroelectric devices to the forefront of nanoelectronics, offering distinct advantages over alternative technologies. Ferroelectric memories, such as Ferroelectric Random Access Memories (FeRAM) and the Ferroelectric Field Effect Transistor (FeFET), combine non‐volatility with high‐speed operation and low power consumption, though they contend with specific challenges, including variability and endurance limitations. Meanwhile, piezoelectric and pyroelectric sensors/actuators exploit the capability of ferroelectric materials to interconvert mechanical or thermal energy with electrical signals. These sensors demonstrate exceptional sensitivity, though factors such as material fatigue and temperature stability can impact their performance. Additionally, radio frequency devices, particularly varactors, utilize ferroelectric materials to enable tunable capacitance, enhancing dynamic control. This review assesses the advantages and current challenges across these technologies, offering insights into prospective solutions.https://doi.org/10.1002/aelm.202400686charge pumpingdefectsferroelectricfefetframftj |
| spellingShingle | David Lehninger Franz Müller Yannick Raffel Shouzhuo Yang Markus Neuber Sukhrob Abdulazhanov Thomas Kämpfe Konrad Seidel Maximilian Lederer Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems Advanced Electronic Materials charge pumping defects ferroelectric fefet fram ftj |
| title | Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems |
| title_full | Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems |
| title_fullStr | Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems |
| title_full_unstemmed | Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems |
| title_short | Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems |
| title_sort | ferroelectric hafnium oxide a potential game changer for nanoelectronic devices and systems |
| topic | charge pumping defects ferroelectric fefet fram ftj |
| url | https://doi.org/10.1002/aelm.202400686 |
| work_keys_str_mv | AT davidlehninger ferroelectrichafniumoxideapotentialgamechangerfornanoelectronicdevicesandsystems AT franzmuller ferroelectrichafniumoxideapotentialgamechangerfornanoelectronicdevicesandsystems AT yannickraffel ferroelectrichafniumoxideapotentialgamechangerfornanoelectronicdevicesandsystems AT shouzhuoyang ferroelectrichafniumoxideapotentialgamechangerfornanoelectronicdevicesandsystems AT markusneuber ferroelectrichafniumoxideapotentialgamechangerfornanoelectronicdevicesandsystems AT sukhrobabdulazhanov ferroelectrichafniumoxideapotentialgamechangerfornanoelectronicdevicesandsystems AT thomaskampfe ferroelectrichafniumoxideapotentialgamechangerfornanoelectronicdevicesandsystems AT konradseidel ferroelectrichafniumoxideapotentialgamechangerfornanoelectronicdevicesandsystems AT maximilianlederer ferroelectrichafniumoxideapotentialgamechangerfornanoelectronicdevicesandsystems |