Evaluation of p-GaN-gate All-GaN Cascode HEMT on SiC Substrate: DC Characteristics and Switching Performance

Evaluation of p-GaN-gate All-GaN Cascode HEMT on SiC Substrate: DC Characteristics and Switching Performance

This article compares p-GaN-gate all-GaN cascode devices with standalone E-mode HEMTs on SiC substrates, with a focus on double pulse testing (DPT), a critical method for evaluating switching performance under realistic operating conditions. The all-GaN cascode, featuring a gate width of 85 mm, demo...

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Bibliographic Details
Main Authors: Dian-Ying Wu, Chih-Yung Hsieh, Yi-Xian Huang, Yu-Chen Liu, Wen-Ching Hsu, Ci-Ze Li, Jia-Zhe Liu, Cheng-Yeu Wu, Meng-Chyi Wu
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
High electron mobility transistor (HEMT)
all-GaN cascode device
standalone E-mode HEMT
p-GaN-gate
Miller effect
high current
Online Access:https://ieeexplore.ieee.org/document/11049654/
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