Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices
Abstract Multidimensional power devices can achieve performance beyond conventional limits by deploying charge‐balanced p‐n junctions. A key obstacle to developing such devices in many wide‐bandgap (WBG) and ultra‐wide bandgap (UWBG) semiconductors is the difficulty of native p‐type doping. Here the...
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-01-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300662 |
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