Impact of Static Electric Field on Dielectrophoretic Alignment of Silicon Nanowires
Abstract Among numerous approaches to assembling nanowires onto electrodes, dielectrophoresis (DEP) is a potential candidate to place the nanowires. However, its yield is still far from perfection, urging fundamental understanding of its dynamics. Here, the impact of a static electric field on diele...
Saved in:
Main Authors: | , , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
Wiley-VCH
2025-01-01
|
Series: | Advanced Materials Interfaces |
Subjects: | |
Online Access: | https://doi.org/10.1002/admi.202400491 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
_version_ | 1841560986630225920 |
---|---|
author | Lia Hong Doheon Koo Hosan Shin Suyeon Choi Hongyun So Jae Byung Park Woosung Park Jeeyoung Shin |
author_facet | Lia Hong Doheon Koo Hosan Shin Suyeon Choi Hongyun So Jae Byung Park Woosung Park Jeeyoung Shin |
author_sort | Lia Hong |
collection | DOAJ |
description | Abstract Among numerous approaches to assembling nanowires onto electrodes, dielectrophoresis (DEP) is a potential candidate to place the nanowires. However, its yield is still far from perfection, urging fundamental understanding of its dynamics. Here, the impact of a static electric field on dielectrophoretic nanowire assembly on gold electrodes is investigated. Specifically, a 4 peak‐to‐peak alternating voltage with 700 Hz is applied and modulate the offset voltage from 0 to 2V. The highest yield in the alignment of the nanowires at 0.5 V offset voltage is found. With the optical investigation of misaligned nanowires, it is found that rotating wires on top of electrodes, and the analysis of their angular velocity suggest the impact of the induced static charges. The numerical analysis quantifies the length scale of competing two forces, dielectrophoretic force and electric double layer force. This work suggests a quantitative understanding of the interplay between dielectrophoresis and electric double layer, which contributes to the advances in scalable nanowire fabrications. |
format | Article |
id | doaj-art-b0b03c6c92d541a9a39d97d6fb0ab8ee |
institution | Kabale University |
issn | 2196-7350 |
language | English |
publishDate | 2025-01-01 |
publisher | Wiley-VCH |
record_format | Article |
series | Advanced Materials Interfaces |
spelling | doaj-art-b0b03c6c92d541a9a39d97d6fb0ab8ee2025-01-03T08:39:29ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-01-01121n/an/a10.1002/admi.202400491Impact of Static Electric Field on Dielectrophoretic Alignment of Silicon NanowiresLia Hong0Doheon Koo1Hosan Shin2Suyeon Choi3Hongyun So4Jae Byung Park5Woosung Park6Jeeyoung Shin7Department of Mechanical Systems Engineering Sookmyung Women's University Seoul 04310 South KoreaDepartment of Mechanical Engineering Hanyang University Seoul 04763 South KoreaDepartment of Applied Physics Korea University Sejong 30019 South KoreaDepartment of Applied Physics Korea University Sejong 30019 South KoreaDepartment of Mechanical Engineering Hanyang University Seoul 04763 South KoreaDepartment of Applied Physics Korea University Sejong 30019 South KoreaSchool of Mechanical Engineering Hanyang University 222 Wangsimni‐ro, Seongdong‐gu Seoul 15588 South KoreaDepartment of Mechanical Systems Engineering Sookmyung Women's University Seoul 04310 South KoreaAbstract Among numerous approaches to assembling nanowires onto electrodes, dielectrophoresis (DEP) is a potential candidate to place the nanowires. However, its yield is still far from perfection, urging fundamental understanding of its dynamics. Here, the impact of a static electric field on dielectrophoretic nanowire assembly on gold electrodes is investigated. Specifically, a 4 peak‐to‐peak alternating voltage with 700 Hz is applied and modulate the offset voltage from 0 to 2V. The highest yield in the alignment of the nanowires at 0.5 V offset voltage is found. With the optical investigation of misaligned nanowires, it is found that rotating wires on top of electrodes, and the analysis of their angular velocity suggest the impact of the induced static charges. The numerical analysis quantifies the length scale of competing two forces, dielectrophoretic force and electric double layer force. This work suggests a quantitative understanding of the interplay between dielectrophoresis and electric double layer, which contributes to the advances in scalable nanowire fabrications.https://doi.org/10.1002/admi.202400491dielectrophoresiselectric double layermicrofluidicsnanowire assembly |
spellingShingle | Lia Hong Doheon Koo Hosan Shin Suyeon Choi Hongyun So Jae Byung Park Woosung Park Jeeyoung Shin Impact of Static Electric Field on Dielectrophoretic Alignment of Silicon Nanowires Advanced Materials Interfaces dielectrophoresis electric double layer microfluidics nanowire assembly |
title | Impact of Static Electric Field on Dielectrophoretic Alignment of Silicon Nanowires |
title_full | Impact of Static Electric Field on Dielectrophoretic Alignment of Silicon Nanowires |
title_fullStr | Impact of Static Electric Field on Dielectrophoretic Alignment of Silicon Nanowires |
title_full_unstemmed | Impact of Static Electric Field on Dielectrophoretic Alignment of Silicon Nanowires |
title_short | Impact of Static Electric Field on Dielectrophoretic Alignment of Silicon Nanowires |
title_sort | impact of static electric field on dielectrophoretic alignment of silicon nanowires |
topic | dielectrophoresis electric double layer microfluidics nanowire assembly |
url | https://doi.org/10.1002/admi.202400491 |
work_keys_str_mv | AT liahong impactofstaticelectricfieldondielectrophoreticalignmentofsiliconnanowires AT doheonkoo impactofstaticelectricfieldondielectrophoreticalignmentofsiliconnanowires AT hosanshin impactofstaticelectricfieldondielectrophoreticalignmentofsiliconnanowires AT suyeonchoi impactofstaticelectricfieldondielectrophoreticalignmentofsiliconnanowires AT hongyunso impactofstaticelectricfieldondielectrophoreticalignmentofsiliconnanowires AT jaebyungpark impactofstaticelectricfieldondielectrophoreticalignmentofsiliconnanowires AT woosungpark impactofstaticelectricfieldondielectrophoreticalignmentofsiliconnanowires AT jeeyoungshin impactofstaticelectricfieldondielectrophoreticalignmentofsiliconnanowires |