Impact of Static Electric Field on Dielectrophoretic Alignment of Silicon Nanowires

Abstract Among numerous approaches to assembling nanowires onto electrodes, dielectrophoresis (DEP) is a potential candidate to place the nanowires. However, its yield is still far from perfection, urging fundamental understanding of its dynamics. Here, the impact of a static electric field on diele...

Full description

Saved in:
Bibliographic Details
Main Authors: Lia Hong, Doheon Koo, Hosan Shin, Suyeon Choi, Hongyun So, Jae Byung Park, Woosung Park, Jeeyoung Shin
Format: Article
Language:English
Published: Wiley-VCH 2025-01-01
Series:Advanced Materials Interfaces
Subjects:
Online Access:https://doi.org/10.1002/admi.202400491
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1841560986630225920
author Lia Hong
Doheon Koo
Hosan Shin
Suyeon Choi
Hongyun So
Jae Byung Park
Woosung Park
Jeeyoung Shin
author_facet Lia Hong
Doheon Koo
Hosan Shin
Suyeon Choi
Hongyun So
Jae Byung Park
Woosung Park
Jeeyoung Shin
author_sort Lia Hong
collection DOAJ
description Abstract Among numerous approaches to assembling nanowires onto electrodes, dielectrophoresis (DEP) is a potential candidate to place the nanowires. However, its yield is still far from perfection, urging fundamental understanding of its dynamics. Here, the impact of a static electric field on dielectrophoretic nanowire assembly on gold electrodes is investigated. Specifically, a 4 peak‐to‐peak alternating voltage with 700 Hz is applied and modulate the offset voltage from 0 to 2V. The highest yield in the alignment of the nanowires at 0.5 V offset voltage is found. With the optical investigation of misaligned nanowires, it is found that rotating wires on top of electrodes, and the analysis of their angular velocity suggest the impact of the induced static charges. The numerical analysis quantifies the length scale of competing two forces, dielectrophoretic force and electric double layer force. This work suggests a quantitative understanding of the interplay between dielectrophoresis and electric double layer, which contributes to the advances in scalable nanowire fabrications.
format Article
id doaj-art-b0b03c6c92d541a9a39d97d6fb0ab8ee
institution Kabale University
issn 2196-7350
language English
publishDate 2025-01-01
publisher Wiley-VCH
record_format Article
series Advanced Materials Interfaces
spelling doaj-art-b0b03c6c92d541a9a39d97d6fb0ab8ee2025-01-03T08:39:29ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-01-01121n/an/a10.1002/admi.202400491Impact of Static Electric Field on Dielectrophoretic Alignment of Silicon NanowiresLia Hong0Doheon Koo1Hosan Shin2Suyeon Choi3Hongyun So4Jae Byung Park5Woosung Park6Jeeyoung Shin7Department of Mechanical Systems Engineering Sookmyung Women's University Seoul 04310 South KoreaDepartment of Mechanical Engineering Hanyang University Seoul 04763 South KoreaDepartment of Applied Physics Korea University Sejong 30019 South KoreaDepartment of Applied Physics Korea University Sejong 30019 South KoreaDepartment of Mechanical Engineering Hanyang University Seoul 04763 South KoreaDepartment of Applied Physics Korea University Sejong 30019 South KoreaSchool of Mechanical Engineering Hanyang University 222 Wangsimni‐ro, Seongdong‐gu Seoul 15588 South KoreaDepartment of Mechanical Systems Engineering Sookmyung Women's University Seoul 04310 South KoreaAbstract Among numerous approaches to assembling nanowires onto electrodes, dielectrophoresis (DEP) is a potential candidate to place the nanowires. However, its yield is still far from perfection, urging fundamental understanding of its dynamics. Here, the impact of a static electric field on dielectrophoretic nanowire assembly on gold electrodes is investigated. Specifically, a 4 peak‐to‐peak alternating voltage with 700 Hz is applied and modulate the offset voltage from 0 to 2V. The highest yield in the alignment of the nanowires at 0.5 V offset voltage is found. With the optical investigation of misaligned nanowires, it is found that rotating wires on top of electrodes, and the analysis of their angular velocity suggest the impact of the induced static charges. The numerical analysis quantifies the length scale of competing two forces, dielectrophoretic force and electric double layer force. This work suggests a quantitative understanding of the interplay between dielectrophoresis and electric double layer, which contributes to the advances in scalable nanowire fabrications.https://doi.org/10.1002/admi.202400491dielectrophoresiselectric double layermicrofluidicsnanowire assembly
spellingShingle Lia Hong
Doheon Koo
Hosan Shin
Suyeon Choi
Hongyun So
Jae Byung Park
Woosung Park
Jeeyoung Shin
Impact of Static Electric Field on Dielectrophoretic Alignment of Silicon Nanowires
Advanced Materials Interfaces
dielectrophoresis
electric double layer
microfluidics
nanowire assembly
title Impact of Static Electric Field on Dielectrophoretic Alignment of Silicon Nanowires
title_full Impact of Static Electric Field on Dielectrophoretic Alignment of Silicon Nanowires
title_fullStr Impact of Static Electric Field on Dielectrophoretic Alignment of Silicon Nanowires
title_full_unstemmed Impact of Static Electric Field on Dielectrophoretic Alignment of Silicon Nanowires
title_short Impact of Static Electric Field on Dielectrophoretic Alignment of Silicon Nanowires
title_sort impact of static electric field on dielectrophoretic alignment of silicon nanowires
topic dielectrophoresis
electric double layer
microfluidics
nanowire assembly
url https://doi.org/10.1002/admi.202400491
work_keys_str_mv AT liahong impactofstaticelectricfieldondielectrophoreticalignmentofsiliconnanowires
AT doheonkoo impactofstaticelectricfieldondielectrophoreticalignmentofsiliconnanowires
AT hosanshin impactofstaticelectricfieldondielectrophoreticalignmentofsiliconnanowires
AT suyeonchoi impactofstaticelectricfieldondielectrophoreticalignmentofsiliconnanowires
AT hongyunso impactofstaticelectricfieldondielectrophoreticalignmentofsiliconnanowires
AT jaebyungpark impactofstaticelectricfieldondielectrophoreticalignmentofsiliconnanowires
AT woosungpark impactofstaticelectricfieldondielectrophoreticalignmentofsiliconnanowires
AT jeeyoungshin impactofstaticelectricfieldondielectrophoreticalignmentofsiliconnanowires