Evaluation of Single-Event Effect Current-Carrier Mapping Based on Experimental Data
For single-event radiation damage of power MOSFET devices, this paper aims to establish a statistical analysis method based on external observation (gate/drain current characteristics in irradiation environment) to recognize and evaluate the radiation evolution process and damage mechanism of micros...
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-11-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/15/11/1353 |
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| author | Mengtian Bao Ying Wang Jianqun Yang Xingji Li |
| author_facet | Mengtian Bao Ying Wang Jianqun Yang Xingji Li |
| author_sort | Mengtian Bao |
| collection | DOAJ |
| description | For single-event radiation damage of power MOSFET devices, this paper aims to establish a statistical analysis method based on external observation (gate/drain current characteristics in irradiation environment) to recognize and evaluate the radiation evolution process and damage mechanism of microscopic physical quantities inside the devices, namely current-carrier (CC) mapping. Firstly, a special data fluctuate–collapse transform analysis method is proposed according to the temporal characteristics of the gate/drain current. Secondly, a carrier dynamic balance ratio based on current data is defined to evaluate the radiation damage degree of the device. TCAD is used to deeply study the relationship between the external current characteristics and the evolution process of internal physical quantities and the damage mechanism. The results show that the current data timing analysis based on fluctuate–collapse transformation can better peer into the evolution process of irradiation events inside the device, and the statistical analysis based on the dynamic balance ratio of carriers can evaluate the severity of irradiation damage to a certain extent. |
| format | Article |
| id | doaj-art-af0a7a99248b4414ac1944a782fcf18c |
| institution | Kabale University |
| issn | 2072-666X |
| language | English |
| publishDate | 2024-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj-art-af0a7a99248b4414ac1944a782fcf18c2024-11-26T18:13:56ZengMDPI AGMicromachines2072-666X2024-11-011511135310.3390/mi15111353Evaluation of Single-Event Effect Current-Carrier Mapping Based on Experimental DataMengtian Bao0Ying Wang1Jianqun Yang2Xingji Li3School of Information Science and Technology, Dalian Maritime University, Dalian 116026, ChinaSchool of Information Science and Technology, Dalian Maritime University, Dalian 116026, ChinaNational Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment, Harbin Institute of Technology, Harbin 150080, ChinaNational Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment, Harbin Institute of Technology, Harbin 150080, ChinaFor single-event radiation damage of power MOSFET devices, this paper aims to establish a statistical analysis method based on external observation (gate/drain current characteristics in irradiation environment) to recognize and evaluate the radiation evolution process and damage mechanism of microscopic physical quantities inside the devices, namely current-carrier (CC) mapping. Firstly, a special data fluctuate–collapse transform analysis method is proposed according to the temporal characteristics of the gate/drain current. Secondly, a carrier dynamic balance ratio based on current data is defined to evaluate the radiation damage degree of the device. TCAD is used to deeply study the relationship between the external current characteristics and the evolution process of internal physical quantities and the damage mechanism. The results show that the current data timing analysis based on fluctuate–collapse transformation can better peer into the evolution process of irradiation events inside the device, and the statistical analysis based on the dynamic balance ratio of carriers can evaluate the severity of irradiation damage to a certain extent.https://www.mdpi.com/2072-666X/15/11/1353data analysissingle-event effectpower MOSFETevaluation |
| spellingShingle | Mengtian Bao Ying Wang Jianqun Yang Xingji Li Evaluation of Single-Event Effect Current-Carrier Mapping Based on Experimental Data Micromachines data analysis single-event effect power MOSFET evaluation |
| title | Evaluation of Single-Event Effect Current-Carrier Mapping Based on Experimental Data |
| title_full | Evaluation of Single-Event Effect Current-Carrier Mapping Based on Experimental Data |
| title_fullStr | Evaluation of Single-Event Effect Current-Carrier Mapping Based on Experimental Data |
| title_full_unstemmed | Evaluation of Single-Event Effect Current-Carrier Mapping Based on Experimental Data |
| title_short | Evaluation of Single-Event Effect Current-Carrier Mapping Based on Experimental Data |
| title_sort | evaluation of single event effect current carrier mapping based on experimental data |
| topic | data analysis single-event effect power MOSFET evaluation |
| url | https://www.mdpi.com/2072-666X/15/11/1353 |
| work_keys_str_mv | AT mengtianbao evaluationofsingleeventeffectcurrentcarriermappingbasedonexperimentaldata AT yingwang evaluationofsingleeventeffectcurrentcarriermappingbasedonexperimentaldata AT jianqunyang evaluationofsingleeventeffectcurrentcarriermappingbasedonexperimentaldata AT xingjili evaluationofsingleeventeffectcurrentcarriermappingbasedonexperimentaldata |