Evaluation of Single-Event Effect Current-Carrier Mapping Based on Experimental Data

Evaluation of Single-Event Effect Current-Carrier Mapping Based on Experimental Data

For single-event radiation damage of power MOSFET devices, this paper aims to establish a statistical analysis method based on external observation (gate/drain current characteristics in irradiation environment) to recognize and evaluate the radiation evolution process and damage mechanism of micros...

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Bibliographic Details
Main Authors: Mengtian Bao, Ying Wang, Jianqun Yang, Xingji Li
Format: Article
Language:English
Published: MDPI AG 2024-11-01
Series:Micromachines
Subjects:
data analysis
single-event effect
power MOSFET
evaluation
Online Access:https://www.mdpi.com/2072-666X/15/11/1353
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